Table of contents

Quantum computation (QC) is one of the most challenging quantum technologies that promise to revolutionize data computation in the long-term by outperforming the classical supercomputers in specific applications. Errors will hamper this quantum revolution if not sufficiently limited and corrected by quantum error correction codes thus avoiding quantum algorithm failures. In particular millions of highly-coherent qubits arranged in a two-dimensional array are required to implement the surface code, one of the most promising codes for quantum error correction. One of the most attractive technologies to fabricate such large number of almost identical high-quality devices is the well known metal-oxide-semiconductor technology. Silicon quantum processor manufacturing can leverage the technological developments achieved in the last 50 years in the semiconductor industry. Here, we review modeling, fabrication aspects and experimental figures of merit of qubits defined in the spin degree of freedom of charge carriers confined in quantum dots and donors in silicon devices along with classical electronics innovations for qubit control and readout. Furthermore, we discuss potential applications of the technology and finally we review the role of start-ups and companies in the silicon-based QC era.

Plasma-induced defects are often recognized in state-of-the-art semiconductors, high-efficiency solar cells and high-sensitivity image sensors. These defects are in the form of a dangling bond, bond deformation, or impurity/residual, which impacts on the device performance and reliability. The defects are introduced via plasma-material interactions during manufacturing processes such as deposition, etching and implantation. So, the management of defects throughout the manufacturing is important for high-performance device fabrication. In this review, we overview the generation and recovery of plasma-induced defects in order to develop the defect-managed advanced plasma processing for further improving the device performances. The defect generation and recovery are described, based on the recent results of in-situ and real-time detection of plasma-induced defects. Two examples are presented: the growth of hydrogenated amorphous silicon and the surface passivation of crystalline silicon for high-efficiency solar cell applications.

High power pulse magnetron sputtering (HPPMS) processes are characterized by high peak powers and peak voltages. This results in a high fraction of ionized metal ions within the coating plasma. In order to analyze the correlations between parameters of the coating unit and the intensities of the excited and ionized plasma species, optical emission spectroscopy (OES) can be used. In those experiments, several process parameters are varied in a single coating process. Currently, the prediction of plasma parameters based on coating unit data follows deterministic models which cannot describe the complexity in total. Therefore, not all correlations can be fully understood. Artificial neural networks (ANN) can be used to identify correlations between process parameters and plasma species. This enables prediction of OES data based on data of the coating machine. In the present study different coating processes containing the elements Al, Cr, Ti, N and O were investigated. Current and voltages of the cathodes, substrate bias, chamber pressure, gas flows and the target compositions were used as input parameter of the ANN. Time resolved OES data of metal and gas species were used as output data. To determine the most appropriate training algorithm for the current predictions, multiple algorithms were employed. A good prediction accuracy of OES intensity ratios based on coating unit data for industrial scale coating processes for TiAlN was obtained. For CrAlON the prediction of the intensity ratios of the gas species showed good results. Nowadays a high amount of coating machine parameter variations in physical vapor deposition processes is needed in order to achieve tailored coating parameters. By using plasma diagnostics, such as OES, cost intensive coating deposition processes can be reduced significantly. A further shortening of process development time is possible by using ANN, since plasma compositions can be determined based on coating unit data.

In this work, a capacitive flexible tactile sensor based on the composite dielectric layer with a C-type symmetrical structure is proposed to improve the sensing performance through the introduction of a precise structure. Combined with simulations and experiments, the influence of the structural characteristics of the tactile sensor on its sensitivity is investigated, the correlation between the signal output of the sensor and the loading pressure is shown for different structural parameter designs, and the structure of the sensor is optimized. Data results display that the tactile sensor proposed in this work exhibits a lower detection limit (8.6 Pa) and an ultra-wide linear sensing range (8.6–500 kPa). In addition, from the 55 ms response time of the sensor and 2000 cycles of experiments, it can be concluded that the sensor possesses good repeatability and durability, and can achieve more accurate measurement results in motion detection, soft robots, and electronic skin.

Boron-induced electronic states were investigated via a combination of polar magneto-optical Kerr effect (p-MOKE) spectroscopy and spectroscopic ellipsometry for one of the antiperovskite nitrides, Mn₄N. The boron content in the Mn₄N film varied from 0 to 4.3 at.%, for which the crystal structure was maintained. The amplitude of p-MOKE spectra and the diagonal and off-diagonal dielectric tensors decreased with increasing boron content, which is in agreement with the magnetic properties such as magnetic anisotropy and saturation magnetization. These results were related to the lattice expansion and displacement of the charge density in the Mn₄N by boron doping. However, the peak energy of the Lorentz oscillator in the diagonal elements of dielectric tensors suggests that a dominant inter-band transition was independent of boron content.

Sputtered indium tin oxide (ITO) is widely used as an electrode in semi-transparent and tandem perovskite solar cells. However, damage from sputtering to under layers and the limited conductivity of ITO are still the two main obstacles that hinder further performance improvement of the devices. In this work, the effects and mechanism of sputtering damage and poor conductivity of ITO are investigated based on a traditional perovskite solar cell with bathocuproine (BCP) buffer layer. In order to suppress the sputtering damage, tin oxide (SnO₂) is deposited on C₆₀ to replace the BCP buffer layer. However, it is found that the deposition of SnO₂ on the non-reactive C₆₀ by atomic layer deposition will result in island growth of SnO₂ film, which is the key reason for large dark current in solar cells. Fortunately, the phenomenon is inhibited by decorating C₆₀ surface with WO₃ thin film. In order to improve the conductivity of the transparent electrode, an ITO/Au/ITO multilayer architecture is designed. The fill factor (FF) and power conversion efficiency (PCE) of the semi-transparent solar cells (ST-PSCs) with the modified buffer layer and electrodes reached 76.4% and 17.62%, respectively, showing an improvement of FF and PCE when compared to the device with BCP buffer layer and ITO electrode. It is revealed that the optimization also increases the short circuit current of the solar cells. These results provide new strategies for damage reduction of sputtering and performance improvement of ST-PSCs.

Large area manufacturing processes of thin films such as large-area vacuum roll-to-roll coating of dielectric and gas permeation barrier layers in industry require a precise control of e.g. film thickness, homogeneity, chemical compositions, crystallinity and surface roughness. In order to determine these properties in real time, hyperspectral imaging is a novel, cost-efficient, and fast tool as in-line technology for large-area quality control. We demonstrate the application of hyperspectral imaging to characterize the thickness of thin films of the multilayer system ZTO/Ag/ITO produced by roll-to-roll magnetron sputtering on 220 mm wide polyethylene terephthalate substrate. X-ray reflectivity measurements are used to determine the thickness gradients of roll-to-roll produced foils with sub nanometer accuracy that serve as ground truth data to train a machine learning model for the interpretation of the hyperspectral imaging spectra. Based on the model, the sub-layer thicknesses on the complete substrate foil area were predicted which demonstrates the capabilities of this approach for large-scale in-line real-time quality control for industrial applications.

Polarization-sensitive detectors are of great importance in the fields of remote sensing and imaging, environmental monitoring, and medical diagnosis. The surface plasmon effect can the enable polarization sensitivity of photodetectors through metallic gratings. However, limited by the precision of the nano-fabrication process, it is difficult to fabricate an ultraviolet (UV) polarization-sensitive detector integrated with sub-wavelength metal gratings and the polarization extinction ratio is relatively low. In this paper, an Al–ZnO composite double-layer grating structure was designed. The ZnO active layer and the Al layer were both fabricated into same-sized grating structures. Through this design, the slit width could be enlarged to some degree, while the response to 90° polarized light remained low. It is beneficial to realize a high polarization ratio and to spare the need for rigid fabrication accuracy. In addition, the influence of the structural parameters of the grating on the performance of the detector was studied by simulation. It was found that the resonance wavelength can be adjusted by changing the slit width and grating height, respectively. This provides a useful means for polarization-sensitive detection in different wavelength ranges. The polarization extinction ratio of the detector with a double-layer composite grating can reach 52 in the UV band (365 nm). This provides a good alternative to replace the traditional framework relying on the combination of polarizers and detectors. Moreover, it is a promising structure for high-density integrated photodetectors and imaging chips in the future.

Graphene metamaterials (MMs) have the potential to reconfigure and dynamically control terahertz (THz) waves. In this study, we conducted numerical investigations to explore the effects of externally applied magnetic fields up to 20 Tesla on the transmission properties of graphene patterned split ring resonator (GSRR) MMs in the THz region. We quantitatively compared the tunability of resonance amplitude and frequency in the co-polarized transmission component between the magnetic method and the traditional electrical approach. Our results demonstrate that magnetic tuning can effectively modulate the resonant properties of GSRR MMs. Furthermore, when combining electrical and magnetic tuning, we observed an enhancement in the polarization conversion ratio, as well as the achievement of a significant Faraday rotation angle of nearly 90 degrees in GSRR MMs. These findings indicate the potential of functional graphene-based THz devices, including switches, modulators, polarization converters, and sensors.

We report on scalable heterointegration of superconducting electrodes and epitaxial semiconductor quantum dots (QDs) on strong piezoelectric and optically nonlinear lithium niobate. The implemented processes combine the sputter-deposited thin film superconductor niobium nitride and III–V compound semiconductor membranes onto the host substrate. The superconducting thin film is employed as a zero-resistivity electrode material for a surface acoustic wave resonator with internal quality factors $Q \approx 17\,000$ representing a three-fold enhancement compared to identical devices with normal conducting electrodes. Superconducting operation of ${\approx}\,400\,\mathrm{MHz}$ resonators is achieved to temperatures $T\gt7\,\mathrm{K}$ and electrical radio frequency powers $P_{\mathrm{rf}}\gt+9\,\mathrm{dBm}$. Heterogeneously integrated single QDs couple to the resonant phononic field of the surface acoustic wave resonator operated in the superconducting regime. Position and frequency selective coupling mediated by deformation potential coupling is validated using time-integrated and time-resolved optical spectroscopy. Furthermore, acoustoelectric charge state control is achieved in a modified device geometry harnessing large piezoelectric fields inside the resonator. The hybrid QD—surface acoustic wave resonator can be scaled to higher operation frequencies and smaller mode volumes for quantum phase modulation and transduction between photons and phonons via the QD. Finally, the employed materials allow for the realization of other types of optoelectronic devices, including superconducting single photon detectors and integrated photonic and phononic circuits.

We propose new optical dispersion models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the semi-empirical Tauc–Lorentz dispersion model and the band-fluctuations approach to derive a five-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect semiconductors. Main features of the dispersion models are the self-consistent generation of the exponential Urbach tail below the bandgap and the incorporation of the Lorentz oscillator behavior due to electronic transitions above the fundamental region. We apply and test these models on optical data of direct (MAPbI₃, gallium arsenide and indium phosphide), indirect (gallium phosphide and crystalline silicon), and amorphous hydrogenated silicon semiconductors, accurately describing the spectra of the imaginary part of the electrical permittivity. Lastly, we compare our results with other similarly inspired dispersion models to assess the optical bandgap, Urbach tail and oscillator central resonance energy.

Utilizing exciplex as the host and fluorescence emitter with dopant materials has been proved successfully to fabricate highly-efficient organic light-emitting diodes. Exciton evolution and energy transfer in this exciplex host–guest system are complex. Gaining insight into the electroluminescence (EL) mechanisms in exciplex-based devices is key for further optimizing device configuration. Here, we have investigated exciton dynamics in devices with exciplex as host and 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) as red fluorescence emitter. Two exciplexes, 2,6-bis(3-(9H-carbazol-9-yl)phenyl)pyridine (26DCzPPY) doped 2,4,6-tris[3-(triphenylphosphine)phenyl]-1,3,5-triazine (POT2T), and 4,4',4''-tris[3-methylphenyl(phenyl)amino]-triphenylamine (m-MTDATA) doped tris(8-hydroxyquinoline)aluminum(III) (Alq₃), with different band energy are utilized as host materials. Combining the measurements of transient EL, transient photoluminescence and magnetic field effect (MFE), it is concluded that Dexter energy transfer, together with Förster resonance energy transfer, are confirmed in the pure fluorescence doped system. Meanwhile, it is found that DCJTB works with the hot excitons mechanism but not a traditional red fluorescence emitter as recognized previously. This work presents that the transient MFE is powerful for detecting excitonic dynamic processes in excipelx based host–guest EL systems.

Memristive devices have shown a great potential for non-volatile memory circuits and neuromorphic computing. For both applications it is essential to know the physical mechanisms behind resistive switching; in particular, the time response to external voltage signals. To shed light in these issues we have studied the role played by the applied voltage ramp rate in the electrical properties of TiN/Ti/HfO₂/W metal–insulator–metal resistive switching devices. Using an ad hoc experimental set-up, the current–voltage characteristics were measured for ramp rates ranging from 100 mV s⁻¹–1 MV s⁻¹. These measurements were used to investigate in detail the set and reset transitions. It is shown that the highest ramp rates allow controlling the resistance values corresponding to the intermediate states at the very beginning of the reset process, which is not possible by means of standard quasistatic techniques. Both the set and reset voltages increase with the ramp rate because the oxygen vacancies movement is frequency dependent so that, when the ramp rate is high enough, the conductive filaments neither fully form nor dissolve. In agreement with Chua's theory of memristive devices, this effect causes the device resistance window to decrease as the ramp rate increases, and even to vanish for very high ramp rates. Remarkably, we demonstrate that the voltage ramp rate can be straightforwardly used to control the conductance change of the switching devices, which opens up a new way to program the synaptic weights when using these devices to mimic synapses for neuromorphic engineering applications. Moreover, the data obtained have been compared with the predictions of the dynamic memdiode model.

To enhance the surface insulation properties of SiO₂/epoxy resin composites, the SiO₂ filler is co-modified with a chemical method and dielectric barrier discharge plasma in this work. The effects on the micro-structures, electrical parameters and surface insulation properties of the materials are studied. The results show that chemical modification using the silane coupling agent (KH550) can effectively introduce organo-functional groups into SiO₂ filler. On the other hand, plasma modification shows little effect on the organo-functional group but significantly increases the dispersity of the nanoparticles, therefore reducing filler conglobation in epoxy resin composite. The composite samples with SiO₂ doping concentration of 1 wt.%, 2 wt.%, 3 wt.%, 5 wt.% and 7 wt.% are prepared and characterized. It is found that the synergy of chemical and plasma methods could significantly improve the surface insulation of composite samples. Through doping 2 wt.% of the co-modified SiO₂ filler, the direct current flashover voltage of the composites in dry air at atmospheric pressure can be increased to 1.53 times of the pure epoxy. The enhanced surface insulation properties are explained by the trap effect and the change of electrical parameters through the co-modification process.

In the etching process, a bias source is usually applied to the bottom electrode in inductively coupled plasmas (ICPs) to achieve independent control of the ion flux and ion energy. In this work, a hybrid model, which consists of a global model combined bi-directionally with a fluid sheath model, is employed to investigate the dual-frequency (DF) bias effect on the inductively coupled Cl₂ plasmas under different pressures. The results indicate that the DC self-bias voltage developed on the biased electrode is approximately a linear function of the phase shift between the fundamental frequency and its second harmonic, and the value only varies slightly with pressure. Therefore, the ion energy on the bottom electrode can be modulated efficiently by the bias voltage waveform, i.e. the fluctuation of the ion energy with phase shift is about 40% for all pressures investigated. Besides, the ion energy and angular distribution functions (IEADFs) in DF biased inductive discharges is complicated, i.e. the IEADFs exhibits a four-peak structure under certain phase shift values. Although the species densities and ion fluxes also evolve with phase shift, the fluctuations are less obvious, especially for Cl₂⁺ ions at low pressure. In conclusion, the independent control of the ion energy and ion flux are realized in DF biased ICPs, and the results obtained in this work are of significant importance for improving the etching process.

Unsteady electrostatic forcing is investigated as a method for manipulating turbulent plasma behaviour within Hall-effect thrusters and similar cross-field plasma devices using a simplified one-dimensional three-velocity azimuthal electrostatic particle-in-cell simulation. A wide range of axial electric field forcing frequencies from 1 MHz up to 10 GHz at amplitudes of 10 V cm⁻¹, 50 V cm⁻¹ and 100 V cm⁻¹ are applied to the plasma and the response is evaluated against a baseline case defined by the community benchmark LANDMARK Test Case 1. 'Tailoring' of plasma parameters, such as the electron cross-field mobility, is demonstrated via manipulation of the electron drift instability using unsteady forcing. Excitation of the unstable electron cyclotron modes by the electron drift instability is shown to be able to produce a reduction of the resultant electron cross-field mobility of the plasma by up to 50% compared to the baseline value. Additionally, forcing at the electron cyclotron frequency appears to be capable of increasing cross-field mobility by up to 2000%. Implications of the results for direct drive electric propulsion systems and improved current utilization efficiencies for Hall-effect thrusters are discussed.

The temporal afterglow between two pulses of a repetitively pulsed radio-frequency driven low-pressure argon-acetylene plasma is experimentally explored using laser-induced photodetachment combined with microwave cavity resonance spectroscopy. The densities of electrons and negatively charged species, i.e. anions and dust particles, are measured temporally resolved until 1.9 s in the temporal plasma afterglow. Two different plasma-on times are adjusted to investigate the dynamics of anions and dust particles in the afterglow phase. The measurements show that while electrons decay rapidly within the first few milliseconds of the afterglow phase, the negatively charged species reside much longer in the plasma after the plasma is switched off. The electron density decay is measured to be faster for a longer plasma-on time. This effect is attributed to an enhanced recombination rate due to a higher dust particle density and/or size. The density of negatively charged species decays within two different timescales. The first 20 milliseconds of the afterglow is marked with a rapid decay in the negatively charged species density, in contrast with their slow density decay in the second time scale. Moreover, a residual of the negatively charged species densities is detected as long as 1.9 s after extinguishing the plasma.

Surface flashover across an insulator in a vacuum is a destructive plasma discharge which undermines the behaviors of a range of applications in electrical engineering, particle physics and space engineering, etc. This phenomenon is widely modeled by the particle-in-cell (PIC) simulation, here the continuum and kinetic simulation method is first proposed and implemented as an alternative solution for flashover modeling, aiming for the prevention of unfavorable particle noises in PIC models. A one dimension in space, two dimensions in velocity kinetic simulation model is constructed. Modeling setup, physical assumptions, and simulation algorithm are presented in detail, and a comparison with the well-known secondary electron (SE) emission avalanche analytical expression and existing PIC simulation are made. The obtained kinetic simulation results are consistent with the analytical prediction, and feature noise-free data of surface charge density as well as fluxes of primary and SEs. Discrepancies between the two simulation models and analytical predictions are explained. The code is convenient for updating and to include additional physical processes. The possible implementations of outgassing and plasma species for the final breakdown stage are discussed. The proposed continuum and kinetic approach are expected to inspire future modeling studies for the flashover mechanism and mitigation.

Resistive switching cycles were realized in Au/ZnS/substrate (indium–tin oxide (ITO), Cu, Si) structures, and electrically erasable writing operations were achieved in the Au/ZnS/Si structure using conductive atomic force microcopy. High-resolution transmission electron microscopy revealed that high resistance state was a mixture of amorphous and nanocrystalline state, while the frequency response of alternating current conductivity indicated that the low resistance state (LRS) was only nanocrystalline. Electric field and thermal effects contributed to the distribution of conductive defects in the ZnS film, and nearest-neighbor hopping conduction controlled the electrical resistance of the Au/ZnS/ITO structure. X-ray photoemission spectroscopy analysis of conductive defects of ZnS films in the LRS revealed that they were zinc-rich or sulfur-poor. This study confirms the intrinsic resistive switching characteristic of ZnS films, which can serve as nonoxide materials for nonvolatile memory application.

Local strain, as a small degree and single direction strain method, can effectively regulate the structures and electronic properties of armchair Janus MoSSe nanoribbon, so that the system can be transformed from the original 0.467 eV indirect band gap into 0.259 eV (3-zig), 0.117 eV (3-arm), 0.080 eV (6-arm) and 0.139 eV (9-zig) direct band-gap semiconductor according to the different strain degrees and directions. Compared with traditional MoS₂ and MoSe₂ nanoribbons, Janus MoSSe nanoribbon shows relatively stable band structure under local strain. The structure and electronic properties of Janus MoSSe nanoribbon are anisotropic when the local strain is along different directions. Due to the broken mirror symmetry of the Janus system and the appearance of in-plane local polarization, the spin polarization effect of Janus nanoribbon under local strain is more remarkable. When the local strain degree C = 0.167 is along the zigzag direction and the local strain C ⩾ 0.056 is along the armchair direction, the Janus nanoribbon exhibits half-metallic properties and surprisingly induces a magnetic moment. For the local strain along the armchair direction, the total magnetic moment of the system can be up to 2.05 μ_B when C = 0.111. A local strain method is applied to the nanoribbon system, which can effectively regulate the geometric configuration and electronic structure without external doping, and introduce magnetism, providing the possibility for expanding nanoribbons as potential nanoelectronic and spintronic materials.

A periodic structure absorber combined with diodes and magnetic material is proposed in this paper. By changing the power supply voltage, the absorbing performance of the absorber can be changed to adapt to different electromagnetic environments. The influence of the diode resistance variation for the absorption property of the absorber is explored by the symmetry model and the equivalent circuit model, and the role of the diode is cleared in realizing the tunability of the absorber. The design of the branch structure circuit creates two absorbing peaks in the absorber, and due to the adding of the magnetic material, the structure proposed in this paper has the advantages of wider adjustable frequency and lower frequency absorption peaks. Experiments show that the absorption peak of the absorber changes from 4.3 GHz to 8.8 GHz when the bias voltage is changed from 0 to 9 V and the reflectivity envelope covers a broadband of 4–4.6 GHz and 6–9.3 GHz below −10 dB.

Silver thin films have wide-ranging applications in optical coatings and optoelectronic devices. However, their poor wettability to substrates such as glass often leads to an island growth mode, known as the Volmer–Weber mode. This study demonstrates a method that utilizes a low-energy ion beam (IB) treatment in conjunction with magnetron sputtering to fabricate continuous silver films as thin as 6 nm. A single-beam ion source generates low-energy soft ions to establish a nominal 1 nm seed silver layer, which significantly enhances the wettability of the subsequently deposited silver films, resulting in a continuous film of approximately 6 nm with a resistivity as low as 11.4 µΩ.cm. The transmittance spectra of these films were found to be comparable to simulated results, and the standard 100-grid tape test showed a marked improvement in adhesion to glass compared to silver films sputter-deposited without the IB treatment. High-resolution scanning electron microscopy images of the early growth stage indicate that the IB treatment promotes nucleation, while films without the IB treatment tend to form isolated islands. X-ray diffraction patterns indicate that the (111) crystallization is suppressed by the soft IB treatment, while growth of large crystals with (200) orientation is strengthened. This method is a promising approach for the fabrication of silver thin films with improved properties for use in optical coatings and optoelectronics.

During the arc breaking process of high-voltage circuit breakers, the eco-friendly SF₆-alternative gases will inevitably decompose and generate various decomposition products. In some cases, this will contain solid by-products such as solid carbon, which will have a deterioration effect on the electrical insulation performance of the equipment. It has been found that adding a proper amount of O₂ can effectively inhibit the formation of solid carbon. In this paper, based on the improved Gibbs free energy minimization method, a calculation model considering the solid decomposition products was established, and the arc plasma composition of CO₂/O₂ mixtures with the new eco-friendly gases, such as C₄F₇N, C₅F₁₀O, HFO-1234ze(E) and HFO-1336mzz(E), in local thermodynamic equilibrium state was calculated. The change of decomposition products with the initial O₂ ratio is studied, and the criterion expression of inhibiting solid carbon formation is obtained. We also applied the method to the calculation of other SF₆-alternative gases containing sulfur atoms such as NSF₃ and CF₃SO₂F. Finally, we showed that solid carbon can be inhibited when a proper molecule formula is satisfied. This work may provide new ideas for further exploring the potential of SF_6-alternative gases.

In this work, lead magnesium niobate-lead titanate (PMN-0.3PT) and polydimethylsiloxane (PDMS)-based flexible piezoelectric-polymer composites are designd and developd for efficient mechanical energy harvesting through a combined experimental-theoretical approach. A solid-state reaction method was employed to synthesize PMN-0.3PT piezo-ceramic, which was subsequently used for the fabrication of ${v_{\text{r}}}$-PMN-0.3PT/PDMS piezoelectric-polymer 0–3 composite with different volume fractions, ${v_{\text{r}}}$ = 0.03, 0.25, and 0.50 of PMN-0.3PT reinforcement. Uniformly distributed PMN-0.3PT particles were found to retain their structural symmetry across the volume fractions and are well adhered to the PDMS matrix. The effective electromechanical properties of the composites were measured and compared with model predictions employing the finite element method and Eshelby–Mori–Tanaka-based micromechanical models. Considering that flexibility is a critical design parameter, we propose a new figure-of-merit term that would consider both electromechanical conversion as well as the mechanical flexibility of the material. We show that at ${v_{\text{r}}}$ = 0.5, PMN-0.3PT/PDMS 0–3 composite yields an optimum combination of energy harvesting performance and flexibility. Our study further demonstrates that the orientation of the PMN-0.3PT particles does not significantly influence the effective elastic and dielectric properties at low and moderate PMN-PT content, attributed to the lower aspect ratio of the reinforcement particles. The piezoelectric charge coefficient showed small yet finite change with increasing reinforcement content. A maximum current density, 35 nA cm⁻², and electric field, 90 V cm⁻¹, was obtained with a cyclic compressive stress of 0.22 MPa (force, 50 N) at 5 Hz, in a piezoelectric generator, based on ${v_{\text{r}}}$ = 0.5.

The vertical stacking of different two-dimensional materials to construct van der Waals heterostructures (vdWHs) opens up a promising platform for designing high-efficiency photocatalysts. Direct Z-scheme heterostructures for photocatalytic dissociation have received much attention in recent years, in which charge carriers migrate directly between two semiconductors without redox mediators. Here, the electronic and optical properties as well as the solar-to-hydrogen conversion efficiency of g-GeC/ PtSe₂ vdWHs are systematically investigated, especially for their high-efficiency visible-light water splitting catalyst features. Calculations show that the g-GeC/ PtSe₂ vdWH is a semiconductor with an indirect band gap of 1.356 eV, featuring a type-II band alignment. The built-in electric field E_int and band bending at the interface lead to a direct Z-scheme photocatalytic structure, and photocatalytic water splitting can be realized in the pH range of 0–14. In particular, with biaxial tensile strain = 4% applied, the g-GeC/PtSe₂ vdWH possesses a smaller band gap, wider visible light response range and very high STH conversion efficiency (η_STH) up to 49.07%, entirely satisfying the optimal photocatalytic water splitting conditions. This work provides a new perspective for designing promising direct Z-scheme visible light water splitting catalysts with a high-efficiency solar energy conversion, beneficially to the development of clean energy.