Abstract
Semiconductor materials used as potential barriers in the study are GaAs, GaSb, and AlAs. These materials will be arranged in certain combinations to form triple potential barrier structures and the effect of combinations will be analysed against transmission coefficient values. In this study, the maximum energy of the electron is 1 eV and the matrix propagation method is used where the effect of the combinations structure on transmission coefficient values is numerically analysed using a computational program. The results showed that the structuring potential barrier affects the value of the transmission coefficient. In the uniform barriers arrangements, the value of the transmission coefficient decreases with increasing potential barrier energy. Whereas in the arrangement of different barrier combinations, two opposing combination arrangements have the same transmission coefficient values. Thus, from six combination arrangements, there are three kinds of transmission coefficient values. The maximum transmission coefficient value is 1.000 in the triple potential barrier of GaSb at 0.49 eV. Research on the tunnel effect contributed to the development of electronic and optoelectronic devices such as transistors and lasers.
Export citation and abstract BibTeX RIS
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.