Electronic structure of antiferromagnetic MnTe

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, , Citation M Podgorny and J Oleszkiewicz 1983 J. Phys. C: Solid State Phys. 16 2547 DOI 10.1088/0022-3719/16/13/017

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1 Lab. Nazionali di Frascati, Istituto Nazionale Fisica Nucleare, Frascati, Italy

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0022-3719/16/13/2547

Abstract

The authors present a band calculation for antiferromagnetic MnTe. MnTe is found to be a semiconductor with an indirect energy gap of 0.35 eV. The density of states and reflectivity spectra are presented and compared with experiment. As a result of comparison they conclude that optical properties of MnTe can be described in the framework of band theory.

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