Table of contents

Conventionally, field manipulation enabled by metasurface is effective to generate different polarizations and radiation beams for the propagating electromagnetic waves. However, it requires a relatively large size and an inevitable focal length that are incompatible with small communication systems. In this paper, we exhibit a method of implementing partial isoflux radiation beam through a dielectric block which is compact and simple in structure. The radiation source is integrated inside the dielectric block. The phase on the wavefront is redistributed after passing the dielectric bock. Full-wave simulation and measurement results confirm the validity of the proposed method.

The magnetic properties of Cr impurities in β-Ga₂O₃ are investigated by band-gap corrected density-functional calculation. We show that Cr impurities carry a local spin magnetic moment, but in the absence of external doping exhibit no magnetic interaction. Under n-type doping conditions, however, a strong and directional long-range ferromagnetic interaction emerges, which diminishes again as carrier electron concentration is increased beyond a threshold. These results indicate carrier-mediated ferromagnetism in Cr-doped β-Ga₂O₃.

In this study, we developed extended-gate AlGaAs/GaAs HEMT sensors for accurate cTnI detection in serum. During the research, we found that blocking reagents whose molecule sizes are as large as the sizes of the target biomolecules can greatly improve the accuracy of detection. Based on this, the range of linear detection was significantly broadened, from 100 fg ml⁻¹ to 1 ng ml⁻¹. Additionally, 30y extended-gate HEMT sensors help to achieve accurate detection of cTnI in serum. The lowest relative errors of the 30y-structure were about 4%, which are greatly reduced as compared with the errors when using conventional sensors.

We report the physical origins of Schottky-barrier height (SBH) modulations at the interface of germanium (Ge) and monolayer transition metal dichalcogenides (TMDs) through ab initio calculations. The effects of surface passivation with hydrogen or fluorine as well as interfacial layer (IL) engineering using hexagonal boron nitride (h-BN) or graphene are discussed. H−/F− passivation can change the intrinsic contact of Ge and TMDs into n- and p-type contacts, respectively. More importantly, an ideal p-type contact with vanished SBH could be achieved by using h-BN as the IL. This approach holds promises to the integration of TMDs on Ge-based devices.

We demonstrate high output power UVC-LEDs from 230 to 237 nm on AlN single-crystal substrates. The UVC-LEDs show a single peak in the electroluminescence spectrum, from 20 to 300 mA. Forward voltages were typically ∼7 V at 100 mA while measured initial output powers at 237 nm, 235 nm, 233 nm and 230 nm were 2.2 mW, 1.9 mW, 1.5 mW and 1.2 mW, respectively. At 20 mA, the measured wall-plug efficiencies were 0.37%, 0.32%, 0.25% and 0.19% at the same wavelengths, respectively. These devices have demonstrated over 3600 h of lifetime operating at 20 mA.

With the rapid development of precision measurements relying on atom absorption such as atomic inertial sensors and optical magnetometry, advanced lasers are urgently required especially ultralow-noise lasers corresponding to the atom absorption line. For the D2 line of rubidium atoms, an ultralow-intensity-noise 780 nm single-frequency fiber-based laser with an output power of 340 mW is demonstrated. By eliminating polarization sensitivity in the noise suppression process based on the gain saturation of a semiconductor optical amplifier, a relative intensity noise of −151 dB Hz⁻¹ in the frequency range from 0.1 to 50 MHz is achieved, which approaches the shot noise limit.

We report on a study of UVC photonics integrated circuit consisting of monolithically integrated Al_xGa_1−xN multiple quantum wells based light-emitting diodes, detectors and channel waveguides on sapphire substrates. The waveguide stack consisted of a 1.5 μm thick n-Al_0.65Ga_0.35N waveguide over an AlN (3.5 μm thick) clad layer. Using the integrated devices, we estimated the multi-mode ridge waveguide losses to be 23 cm⁻¹ at λ_emission ∼ 280 nm. We also measured that approximately 80% of the guided light was confined in the n⁺-Al_0.65Ga_0.35N layer, 7% in the underlying AlN cladding and the remaining 13% in the double-side polished sapphire substrate.

We experimentally investigated the thermal nonlinearity in a MoS₂-on-silicon microring resonator. In the hybrid MoS₂-on-silicon microring resonator, there was a threefold increase in the resonance shift rate as input optical power increased. The effective photothermal coefficient of the MoS₂-on-silicon resonator was enhanced to 4.7 × 10⁻¹⁵ m² W⁻¹. The enhancement can be attributed to the presence of defect states of the MoS₂ film, leading to additional absorption of light and enhanced heating, which changed the effective refractive index of the resonator. Efficient thermal bistability was observed in the resonator.

We propose and experimentally demonstrate a silicon based ultra-compact and low loss higher order mode bandpass filter (HMF), which was inversely designed by a direct-binary search topology optimization algorithm. The proposed HMF is a directional coupler with optimally positioned etched circular air holes in the coupling region which footprint is only 1.8 × 3 μm². The experimental results show that the HMF has low insertion loss of <1 dB and low crosstalk of <−15 dB in the wavelength range of 1520 ∼ 1580 nm. It can be extended to selectively pass other higher order modes.

In this study, a novel ternary alloy using Mo_0.5Re_0.5S₂ as a saturable absorber (SA) is prepared by liquid phase exfoliation method and successfully applied to a passively Q-switched Tm:YAlO₃ (Tm:YAP) bulk laser for the first time. The nonlinear SA effect of the prepared Mo_0.5Re_0.5S₂ SA at 2 μm is characterized using the open-aperture Z-scan technique and results in a saturable intensity of 5.62 μJ cm⁻² and modulation depth of 7.92%. Using Mo_0.5Re_0.5S₂ as an SA, a 2 μm Q-switched Tm:YAP laser is realized, generating a maximum output power of 0.957 W with a shortest pulse width of 857.5 ns and a maximum repetition rate of 95 kHz. The corresponding single pulse energy and peak power are 10.1 μJ and 11.5 W, respectively. These achievements indicate that Mo_0.5Re_0.5S₂ could be an excellent and reliable SA for mid-infrared laser applications, and ternary transition metal disulfide alloys will bring new application opportunities to optoelectronic devices in the future.

In this letter, super-resolution imaging characteristics of Stampfli-triangle photonic crystal (STPC) and Stampfli-type photonic quasi-crystal (SPQC) flat lenses are investigated. Based on the negative refraction theory, the frequency range of negative refraction for super-resolution imaging of the lenses can be obtained through the band structure calculations of STPC. Due to similarities in the transmission spectra, the full width at half maximum, the sums of object and image distances and effective refractive indexes of both lenses, super-resolution imaging characteristics of SPQC flat lens can be approximately explained by the band structure of STPC and the negative refraction theory.

A spatio-temporal mode-locked (STML) fiber laser is reported based on a semiconductor saturable absorber mirror. The laser has an all-fiber structure and the mode-locking threshold is as low as 200 mW. Single and multiple pulses with switchable central wavelengths are obtained. In particular, pump hysteresis is observed during the generation and disappearance of multiple pulses. The experimental results help to further understand the dynamic characteristics of STML fiber lasers and to explore how they are connected with conventional mode-locked fiber lasers in terms of soliton nonlinear phenomena, which may stimulate new applications in optical communications and nonlinear science.

We report on the observation of diverse structural bound-state patterns in a fiber laser mode-locked by nonlinear polarization rotation. By boosting the pump power, bound states with fixed soliton separation can be observed, where the soliton number inside the bound states increases from two solitons to 14 solitons. Apart from the aforementioned bound states with regular triangular autocorrelation envelopes, bound states with a compound soliton structure are also obtained, typically including the (2 + 2)-type, (2 + 2 + 2)-type, (2 + 1)-type, and (3 + 1)-type bound states. Additionally, numerical simulations are implemented to confirm the fine structure of the bound states.

The packing of Dinaphthothienothiophene (DNTT) molecules, such as their proximities and alignments, can significantly affect the carrier mobility within a device. Since the low-frequency vibrational modes in Raman scattering originate from the intermolecular interactions, they provide direct information about the molecular packing, particularly about their proximities from each other. Therefore, low-frequency Raman scattering turns out to be an indispensable tool to investigate DNTT-based devices for their potential improvements. Here, we report low-frequency Raman investigation on the DNTT molecules in a real transistor device to investigate the intermolecular interactions at a spatial resolution of a few hundreds of nanometers.

We devise three chiral plasmonic lenses (PLs) with distributed nanoslits for detecting the complete state of polarization of an arbitrary polarized light. A double-ring arrayed nanocrosses-based plasmonic lens is proposed to focus the surface plasmon polaritons excited by the two circularly polarized components of the incident light, thus enabling the phase difference between the two components to be retrieved. Two Archimedes-spiral arrayed nanoslits-based PLs with opposite chirality are designed to detect the relative strength of the two components. The focusing properties of the three structures are theoretically derived and numerically investigated, demonstrating the effectiveness of the proposed method.

Based on the rotational Doppler effect arising from optical orbital angular momentum , we proposed the detection system of a rotator over a distance, by probing the object with a Laguerre–Gauss beam and a Kepler telescope. The angular velocities in tens of meters detection distances can be detected by analyzing the returned beating signals. Different probe beams with various topological charges from l = ± 25 to l = ± 45 are employed. The biggest measurement error is 1.15 Hz. This scheme proves the feasibility of a practical sensor to detect a rotator remotely.

We propose an ultranarrow high-order Fano resonance generated by the plasmonic coupling between a hybridized quadrupole mode formed by plasmon hybridization of graphene nanoribbon dimer and a broad magnetic dipole mode from metallic split rings in a hybrid metamaterial. The results reveal that the high-order Fano curve is very narrow and indicates a large quality (Q) factor of 110. The ultrahigh-Q high-order Fano resonance can be convenient tailored by tuning Fermi levels and structural parameters. Our designed ultrahigh-Q hybrid metamaterial exhibits a high optical sensitivity of 4 μm/RIU and figure of merit (FOM) of 44, which is very helpful to design high-sensitive sensors.

Using a vertical spin-valve structure, we observe spin-dependent transport through antimony (Sb)-doped n-type germanium (n-Ge). Epitaxial intermediate Sb-doped Ge layers can be formed between ferromagnetic CoFe and Fe₃Si epilayers on Si(111), where the doping concentration of Sb is estimated to be ∼3 × 10¹⁹ cm⁻³. From the measurement of the current perpendicular to the plane magnetoresistance, we can evidently detect the spin-valve signals from low temperatures up to room temperature. The room-temperature spin diffusion length in the Sb-doped Ge layer can roughly be estimated to be 150–290 nm. By comparing this result and the previous ones, we can clarify the influence of the dopant species on the spin transport even at room temperature in Ge.

NH₃-plasma treatment on different interfaces of stacked gate dielectric of HfGdON/LaTaON/Ge is carried out and the interfacial and electrical properties of the relevant Ge MOS capacitors are compared. Experimental results show that the NH₃-plasma treatment on Ge surface results in superior interfacial and electrical properties. X-ray photoelectron spectroscopy analyses indicate that the NH₃-plasma treatment on Ge surfaces could break Ge–O bonds to react with NH radicals, effectively resulting in the formation of GeO_xN_y, as well as suppression of Ge sub-oxides and passivation of dangling bonds at/near the stack dielectric/Ge interface.

We report a sound impedance matching induced by asymmetry coupling vibrations. To achieve the vibration, acoustic waveguides with two different winding branch pipes are designed. In the acoustic device, the coupling effects of the two different winding branch pipes generate resonant vibrations, which constructs an impedance matching layer and produces a sound transmission with a wide band at lower frequencies. Importantly, multi-mode vibration can be adjusted by adding water. Consequently, the asymmetry winding branch pipes realize multi-mode vibrations that have the potential for use in sound control in broad frequencies.

We describe use of an optimization algorithm to produce three-dimensional, quasi-conformal transformation acoustics. The results indicate that the anisotropy of the transformed material can be made arbitrarily small by increasing the auxiliary function degrees of freedom. A boundary function is defined to prevent the algorithm from affecting the original device function. Bent waveguides with isotropic non-resonant phononic crystals were fabricated. The transmission performances of the optimized and initial transformed waveguides were studied to validate the proposed design method. Numerical simulations predicted the waveguide transmission modes. These were then demonstrated experimentally by measuring the sound pressure components at the outlets.

We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-assisted C–V analysis. Under positive gate stress, small negative V_th shifts (low stress) and a positive V_th shifts (high stress) are observed, ascribed to trapping within the insulator and at the metal/insulator interface. Trapping effects are eliminated through exposure to UV light; wavelength-dependent analysis extracts the threshold de-trapping energy ≈2.95 eV. UV-assisted CV measurements describe the distribution of states at the GaN/Al₂O₃ interface. The described methodology provides an understanding and assessment of trapping mechanisms in vertical GaN transistors.

Pulse width modulation (PWM) driving is common in emerging solid-state or LED lighting. Unlike conventional lighting devices, the peak illumination intensity of a PWM-driven LED can be a hundredfold of average illumination intensity, causing strong lighting flicker. This work addresses the impact of the flicker on indoor amorphous Si (a-Si) photovoltaic cell performance. The power conversion efficiency of an amorphous silicon photovoltaic cell is found to be a function of not the average, but the peak illumination intensity. Indoor photovoltaic cells can thus seriously underperform under PWM-driven solid-state lighting when the peak illumination intensity is high enough to decrement photovoltaic cell performance.

We propose a model for the gate capacitance of GaN-based trench-gate metal-oxide-semiconductor transistors, based on combined measurements, analytical calculations and TCAD simulations. The trench capacitance is found to be equivalent to four different capacitors, used to model the various regions with different doping and orientation of the semiconductor/dielectric interface. In addition, we demonstrate and explain the characteristic double-hump behavior of the G-D and G-DS capacitance of trench-MOSFETs. Lastly, a TCAD simulation results accurately reproduce the experimental data, thus confirming the interpretation on the double hump behavior, and providing insight on the electron density at the gate interface.

Gold (Au) nanocontacts (NCs) being stretched in the [110] direction were analyzed using a transmission electron microscopy (TEM) holder equipped with a force sensor to measure spring constants. The Au NCs showed similar change in spring constant with electrical conductance, regardless of the initial shape of NC formed during stretching of contacted two Au wires. The Young's modulus of the Au NC was estimated to be close to the bulk value. This study demonstrated the performance of TEM-combined method to characterize the mechanical properties of nanomaterials via knowing their shape and size.

We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 μm telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs.

Multilayer graphene (MLG) is a promising material for anodes of next-generation thin-film rechargeable batteries. The inverted layer exchange using an Fe catalyst allowed for the low-temperature (600 °C) self-organization of the anode electrode structure, that is, an active material (MLG) on a current collector (Fe). A coin-type cell, fabricated from the MLG electrode and pure Li metal foil, showed distinct peaks, indicating Li intercalation into the MLG in a cyclic voltammogram. After 100 charge/discharge cycles, the capacity was 3.3 μAh cm⁻² and coulombic efficiency was 98%. The low-temperature synthesis of a MLG anode structure and its operation were demonstrated.

A specially designed magnetron sputtering technique, the energy-filtering magnetron sputtering (EFMS) technique, was utilized to deposit aluminum nitride (AlN) thin films on Si (100) substrates. Improvements in the crystallization properties, surface morphology and optical properties of the films were studied. The results indicate that EFMS can be a useful technique for preparing high-quality thin films, which will be helpful in enabling potential applications of AlN thin film based microelectronic, optoelectronic and surface acoustic wave devices.

An alternative source supply sequence was applied to aluminum nitride (AlN) growth by rf-plasma-assisted molecular-beam epitaxy on silicon carbide (SiC) substrates with a high-quality AlN template layer. Under a nitrogen-only source supply after aluminum source supply, multi-cycle oscillations of reflection high-energy electron diffraction (RHEED) intensity were observed, which were due to layer-by-layer growth of the AlN layer. The RHEED oscillation under nitrogen-only supply indicates that excess aluminum exists on the surface as a few-monolayer-thick wetting layer along with microdroplets. By repeating the sequence, a 105 nm thick high-quality AlN layer was coherently grown on a SiC substrate without aluminum droplets.

The lowest resistivity of highly Si-doped Al_0.62Ga_0.38N was achieved using metalorganic vapor epitaxy. The resistivity strongly depended on the Si concentrations and reached a minimum value of 6.6 × 10⁻³ Ω cm at a Si concentration of 3.2 × 10¹⁹ cm⁻³, where the carrier concentration was close to the Si one. Above this concentration, luminescence bands around 2.4 eV originating from group-III-vacancy–Si complexes (V_III–nSi) were observed, whereas carrier concentrations and mobilities decreased. Growth conditions that avoid high temperatures and V/III ratios result in suppressed formation of V_III–nSi, playing a key role in achieving low resistivity.

Understanding the surface chemistry of sputtered (sp) nickel oxide (NiO_x) hole transporting layer and its influence on the perovskite photovoltaic properties is crucial in aiding improved device performance. Herein, the influence of (1) as-deposited, (2) 2-propanol (IPA) dipping, (3) UV-ozone and (4) plasma treated sp-NiO_x on the perovskite device performance is compared. Surface treatment not only changes the work function and surface wettability of sp-NiO_x but also enhances the perovskite quality and its device performance. Perovskite device with plasma treatment yielded the best efficiency owing to hydrophilic sp-NiO_x surface, deep-lying valance band, and suppressed recombination in bulk of perovskite.

Severe growth irregularity usually encountered in AlN growth on patterned sapphire substrates (PSSs) was completely suppressed in hydride vapor phase epitaxial (HVPE) growth on a PSS having small cone-pattern with a height of 220 nm. At low temperature, the AlN growth on the PSS led to a formation of regular array of hexagonal AlN nano-rods on the cone-tops. At high temperatures, the growth mode turned into a layered fashion and a void-less AlN template with an atomically smooth surface and high crystal quality were realized with an HVPE growth thickness less than 1 μm.

We propose a tunable acoustic metasurface consisting of identical units. Units are rotatable anisotropic three-component resonators, which can induce non-degenerate dipolar resonance, causing an evident phase change in low frequencies. Compared with the monopole resonance widely used in Helmholtz resonators, the polarization direction of the dipole resonance is a new degree of freedom for phase manipulation. The proposed metasurface is constructed by identical units that are made with real (not rigid) materials. The phase profile can continuously change by rotating the anisotropic resonators. We present a wide-angle and broad-band acoustic focusing by the metasurface under a water background.

A monolithic micro-LED display technology is proposed using a gallium-nitride-on-silicon substrate. An active matrix (AM) display was realized by interconnecting nitride-based LEDs as display pixels with Si thin-film transistors (TFTs) as driving circuitries. MOS TFTs were fabricated on a Si surface which had been exposed after dry etching of the LED epitaxial layer. The mobility and sub-threshold slope were measured as 354.3 cm² V⁻¹ s⁻¹ and 0.64 V dec⁻¹, respectively. A 150 pixel-per-inch 0.6 inch monolithic display was demonstrated with a 60 × 60 pixel array AM display by an integration technology on the same substrate.

We report an on-chip single-cell multidirectional observation method based on accurately controlling the ultra-thin glass chamber rotation angles over a microscope. This technique enables one to establish multidirectional visual access to a target cell captured inside of the thin glass chamber. The ultra-thin glass chamber has the advantages of being highly transparent, compact, thin-walled, and less invasive and having an all-closed structure, which efficiently reduces the risk of contamination during observation. The fabricated thin glass chambers' diameters varied from 1.5 to 3.5 mm which were formed on 200 μm glass slides.

GaN-on-Si high electron mobility transistors (HEMTs) with 80 nm gate length fabricated using Si CMOS-compatible Ta/Al ohmic and Ti/Al gate contacts are reported in this work. The device with a source–drain distance (L_sd) of 750 nm exhibited a high cut-off frequency (f_T) of 210 GHz. A three-terminal off-state breakdown voltage (BV_ds) of 46 V and a high Johnson's figure-of-merit (=f_T × BV_ds) of 8.8 THz V have been achieved in a device with L_sd of 1.5 μm. These results show the great potential of GaN-on-Si HEMTs to realize high-performance-to-cost ratio mm-wave devices through mass production using current Si foundries.

The electrical stabilities of AlSiO gate oxides formed through post-deposition annealing (PDA) and intended for GaN-based power devices were assessed. No degradation of the interface properties of AlSiO/n-type GaN or the oxide breakdown voltage was observed, even after PDA up to 1050 °C. Furthermore, higher temperature PDA drastically reduced the trap density in the oxide, as indicated by current–voltage and positive bias temperature instability data. Time-to-breakdown characteristics showed sufficient lifetimes above 20 years at 150 °C in an equivalent field of 5 MV cm⁻¹. Therefore, AlSiO films fabricated by high-temperature PDA are reliable gate oxide films for GaN-based devices.

A huge amount of silicon sludge is disposed of from silicon wafer manufacture, and its reuse is a critical issue. In this study, silicon nanoparticle generation from sludge was explored by nanosecond-pulsed laser irradiation. The nanoparticle production efficiency from silicon sludge was compared with that from silicon wafers. The result showed that using silicon sludge as a laser irradiation target leads to a distinctly higher production efficiency of nanoparticles; the smaller the powder size of the silicon sludge, the higher the efficiency. The generated silicon nanoparticles were crystalline with sizes at the 10 nm level.

We fabricated texture structures on the 3C-SiC surface for improvement of photocathode performance by electrochemical etching. After the electrochemical etching, surface roughness of 3C-SiC increased without point defect introduction because of preferential etching at stacking faults and dislocations in 3C-SiC. The roughness enhanced optical absorption of the photocathodes, while the roughness also had effects on formation of Pt cocatalyst on 3C-SiC surface. When we applied the optimum etching and Pt deposition condition, applied bias photon-to-current conversion efficiency (ABPE) of 2.0% was obtained. This ABPE is the highest value compared with reported efficiencies for SiC photoelectrodes so far.

A versatile heterodyne interferometer for vibration measurements of microstructures is presented. The interferometer is able to measure absolute amplitude and phase from out-of-plane vibration fields. Its measurement range covers the vibration frequency up to 12 GHz with the current setup, and amplitude up to several hundred nanometers by combining the Bessel functions. To demonstrate the capabilities of the setup, measurements of A₀ lamb wave mode and S₁ lamb wave mode of a piezoelectric micromachined ultrasound transducer were implemented. The results show the versatility of the setup for vibration measurements of microstructures.

Contactless photo-electrochemical (PEC) etching was successfully demonstrated on AlGaN/GaN heterostructures using a K₂S₂O₈ aqueous solution. The etching was conducted by a simple method such as just dipping the sample with Ti-cathode pads into the solution under UVC illumination. The etching morphology of the AlGaN surface was very smooth with an root mean square roughness of 0.24 nm. The etching was self-terminated in the AlGaN layer, whose residual thickness was 5 nm uniformly throughout the etched region. These contactless PEC etching features are promising for the fabrication of recessed-gate AlGaN/GaN high-electron-mobility transistors with high recessed-gate thickness reproducibility.

We have proposed and fabricated resistive-type flexible pressure sensors composed of multi-walled carbon nanotube thin films, liquid metal droplets, sponge rubber, and paper. The pressure sensor detects external pressure in the range of tens of kilopascals. The resistance change was found to be approximately 70% when a pressure of 100 kPa was applied. The sensor operation showed good reproducibility under cyclic applied pressure. The simple sensor structure and environment-friendly materials allow the sensor to be easily disassembled into its components, which are reusable and combustible.

We propose the maze-like acoustic metamaterial (MLAMM) unit suitable for regulating the transformer noise. The influence of the length and width of the acoustic waveguide on the sound transmission loss (TL) is studied, and the TL and resonance frequencies of the MLAMM unit are calculated. The visco-thermal effect weakens the resonance transmission peak of the MLAMM unit. Finally, experiments verify that the proposed MLAMM unit has low-frequency broadband sound insulation performance, and the TL is about 25 dB in the frequency band of 100 Hz–500 Hz. The research provides a reasonable and effective solution for noise suppression of transformers.

We demonstrate an all-solid-state potentiometric sensor constructed from solid-state InN/InGaN sensing- and reference electrodes with the epitaxial InN/InGaN layers directly grown on Si substrates. The sensor, evaluated in KCl aqueous solution, exhibits super-Nernstian sensitivity of −78 mV/decade with good linearity for concentrations of 0.01–1 M, which is the physiologically relevant range. Good stability and re-usability are demonstrated by a long-time drift below 0.2 mV h⁻¹ and standard deviation of 8 mV for repeated measurements over 10 d. These properties fulfil the requirements for compact, robust and highly sensitive all-solid-state sensors and sensor arrays.

Hyperentangled Bell-state measurement (HBSM) is an indispensable building block for implementing high-capacity quantum communication. Here we present a universal HBSM scheme resorting to linear optics, which is efficient to divide 16 hyperentangled Bell states in polarization and momentum degrees of freedom (DOFs) into 14 distinguishable groups assisted by time-bin DOF instead of auxiliary entanglement resource. This HBSM scheme has universal applications in quantum information protocols, such as its applications in the implementation of hyperteleportation and hyperentanglement swapping besides hyperdense coding. It enlarges the efficiency and applicability of linear-optical HBSM in quantum information processing.

Separated particles are agglomerated only by the secondary radiation force when trapped at the pressure node. However, the mechanism behind this phenomenon remains unclear. Here, interplays among elastic particles in a trapping process induced by an ultrasonic standing wave are numerically and experimentally investigated. The effects of multi-scattering on particle movement are analyzed by solving the comprehensive acoustic-structure interactions. The theoretical calculations well explain the observed inter-particle behaviors in experiments when they are at or approaching the pressure nodes. Ultrasonic trapping of 100 μm silica particles is experimentally showcased, and the result agrees well with the prediction.