Table of contents

The time effect of tritium silicon p–n junction betavoltaic batteries is considered in this work. For a titanium tritium (TiT₂) source, the processes of decaying, tritium leaking, swelling and ³He releasing are contained in the calculation, and expressions of component and density changes are obtained. As time goes by, the self-absorption rate has a downward trend, while all electrical performances decrease, especially the short-circuit current (I_SC) and the maximum output power (P_max). At about 3.5 a, the battery begins to release gaseous ³He, and the expiry date of the battery is about 10.7 a, shorter than the half-life of tritium. The result indicated that for a tritium source, the time leads to a significant reduction in the electrical performance of the battery, which cannot be ignored in simulations and experiments.

Deep-level transient spectroscopy measurements are conducted on β-Ga$_\mathrm{2}$O$_\mathrm{3}$ thin-films implanted with helium and hydrogen (H) to study the formation of the defect level $E_\mathrm{2}^\mathrm{*}$ ($E_\mathrm{A}$ = 0.71 eV) during heat treatments under an applied reverse-bias voltage (reverse-bias annealing). The formation of $E_\mathrm{2}^\mathrm{*}$ during reverse-bias annealing is a thermally-activated process exhibiting an activation energy of around 1.0 eV to 1.3 eV, and applying larger reverse-bias voltages during the heat treatment results in a larger concentration of $E_\mathrm{2}^\mathrm{*}$. In contrast, heat treatments without an applied reverse-bias voltage (zero-bias annealing) can be used to decrease the $E_\mathrm{2}^\mathrm{*}$ concentration. The removal of $E_\mathrm{2}^\mathrm{*}$ is more pronounced if zero-bias anneals are performed in the presence of H. A scenario for the formation of $E_\mathrm{2}^\mathrm{*}$ is proposed, where the main effect of reverse-bias annealing is an effective change in the Fermi-level position within the space-charge region, and where $E_\mathrm{2}^\mathrm{*}$ is related to a defect complex involving intrinsic defects that exhibits several different configurations whose relative formation energies depend on the Fermi-level position. One of these configurations gives rise to $E_\mathrm{2}^\mathrm{*}$, and is more likely to form if the Fermi-level position is further away from the conduction band edge. The defect complex related to $E_\mathrm{2}^\mathrm{*}$ can become hydrogenated, and the corresponding hydrogenated complex is likely to form when the Fermi level is close to the conduction band edge. Di-vacancy defects formed by oxygen and gallium vacancies (V$_\mathrm{O}$−V$_\mathrm{Ga}$) fulfill several of these requirements, and are proposed as potential candidates for $E_\mathrm{2}^\mathrm{*}$.

Electromagnetic (EM) metasurfaces have attracted great attention from both engineers and researchers due to their unique physical responses. With the rapid development of complex metasurfaces, the design and optimization processes have also become extremely time-consuming and computational resource-consuming. Here we proposed a deep learning model (DLM) based on a convolutional autoencoder network and inverse design network, which can help to establish the complex relationships between the geometries of metasurfaces and their EM responses. As a typical example, a metasurface absorber consisting of polymethacrylimide foam/metal ring alternating multilayers is chosen to demonstrate the capability of the DLM. The relative spectral error of the two desired spectra is only 5.80 and 5.49, respectively. Our model shows great predictive power and may be used as an effective tool to accelerate the design and optimization of metasurfaces.

Due to its importance in future spintronic-based memory devices, the Dzyaloshinskii–Moriya interaction (DMI) has been under intense investigation recently. Yet the feasibility of developing straightforward DMI measurement methods, especially using quasi-static tools, is debatable. Here, we present the observation of a shifted, asymmetric magnetization reversal manifested by interfacial DMI (iDMI) via magnetoresistance (MR) measurements for the first time. A shifted asymmetric MR response results from iDMI in an ultrathin symmetric unpatterned [Ni₈₀Fe₂₀/Pt] _×10 multilayer stack. Moreover, to reveal the presence of iDMI, we have experimentally seen iDMI from nonreciprocity in spin-wave dispersion using Brillouin light-scattering. Also, as a previously developed quasi-static method, we compare the MR results with the magneto-optical Kerr effect with the observed MR results. Our findings open pathways towards direct observation of iDMI in magnetic multilayers.

Cylindrical vector vortex (CVV) beams are topical forms of structured light, and have been studied extensively as single beams, non-separable in two degrees of freedom: spatial mode and polarisation. Here we create arrays of CVV beams using a combination of dynamic phase controlled Dammann gratings and spin–orbit coupling through azimuthally varying geometric phase. We demonstrate control over the number, geometry and vectorness of the CVV arrays by simple adjustment of waveplates and computer generated holograms. To quantify the efficacy of our approach, we employ a recently proposed vector quality factor analysis, realising high quality vector beam arrays with purities in excess of 95%. Our approach is scalable in array size, robust (no interferometric beam combination) and allows for the on-demand creation of arbitrary vector beam arrays, crucial for applications that require multi-spot arrays, for example, in fast laser materials processing, multi-channel communication with spatial modes, and holographic optical traps, as well as in fundamental studies with vector optical lattices.

We used depth-resolved cathodoluminescence spectroscopy (DRCLS), absorption spectroscopy, and temperature-dependent Hall effect (TDH) measurements to study the effects of fluence dependent neutron irradiations on deep level defects and the associated changes of electrical properties of β-Ga₂O₃ grown by low pressure chemical vapor deposition and pulsed laser deposition. DRCLS enabled us to monitor systematic increases of three deep level defects after neutron irradiation which correlated with TDH measurements of significant free carrier removal and mobility decrease. The correlations between defect profiles and electrical property changes vs. irradiation dose link these dominant electrically active native point defects in Ga₂O₃ with their contributions to free carrier mobility, carrier density, and donor/acceptor depth profiles, further revealing their donor/acceptor electrical behavior and physical nature, consistent with the formation of compensating defects. After irradiation, temperature-dependent forming gas (FG) anneals were performed to reverse the radiation-induced damage and carrier removal. The evolution of defect concentrations with increasing neutron dose and their depth-resolved distributions with FG anneal temperature reveal an interplay between specific defects to control electronic properties.

Gallium nitride (GaN) is exceedingly apposite for liquid-based sensor applications because of their high internal piezoelectric polarization, chemical and high temperature stability. In this work, the interaction between GaN and H₂O has been investigated using a novel methodology. We report the fabrication of single crystal GaN lamella with thickness of few hundreds of nanometer using focused ion-beam milling technique, for sensing applications. Results signify that the device resistivity increases with time at room temperature during the GaN-H₂O interaction. Such a change in electrical resistivity is explained based on the electron transfer and electrochemical reactions at the surface of GaN. Study of the surface chemistry transformation of the tested GaN lamella is conducted using high-angle annular dark-field scanning transmission electron microscopy coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) techniques. EDS and EELS results signify the presence of a region containing Ga and O at the interface of the H₂O/GaN which is a result due to the adsorption of molecular H₂O and its dissociation products implying the occurrence of GaN-water reaction.

A novel strain and temperature sensor based on the fiber Bragg grating (FBG) cascaded two-tapered four-core fiber (FCF) Mach–Zehnder interference (MZI) is proposed and fabricated. The two optical fiber tapers, acting respectively as a beam splitter and a coupler, are able to produce interference phenomena, so the high interference extinction ratio (above 20 dB) can be obtained. The attenuation peak at 1562 nm and the FBG center wavelength at 1550 nm in the transmission spectra are, respectively, selected to represent MZI and FBG as the monitoring wavelengths. The results indicate that the sensitivities of MZI to strain and temperature are −1.83 pm μ⁻¹ and 46.93 pm C⁻¹, respectively, and those of FBG to strain and temperature are 1.26 pm μ⁻¹ and 10.58 pm C⁻¹, respectively. Both the FBG and MZI exhibit insensitivity to the refractive index. The cascaded sensor has good linearity and is applied to measure the strain and temperature simultaneously.

Metasurfaces have an excellent ability to manipulate an incident electromagnetic wave through single-layer nano-structures, and thus, they have been successfully used to achieve the integration and miniaturization of optical devices. However, most reported metasurfaces achieve the phase/amplitude modulation through discrete antennas, which affect the performances of meta-devices. In this paper, a quasi-continuous metasurface composed of all-dielectric nanostrips with spatially continuous distribution is proposed. A meta-hologram based on quasi-continuous nanostrips is designed, and the broadband and high-efficiency properties of the designed sample are further demonstrated numerically. Compared to discrete structures, this demonstrated scheme can greatly increase the working bandwidth and energy efficiency of the meta-hologram. The quasi-continuous design can also be extended to some other applications that are associated with metasurfaces, such as meta-mirror, meta-lens, Bessel beam, orbital angular momentum generator and so on.

Reducing bandgap energy in ferroelectric materials has become an important commitment to improve the performance of the photovoltaic solar cell. This study reports the effect of the transition metals Co and Fe ions co-doping on the structure and bandgap of neodymium-modified Bi₄Ti₃O₁₂ based oxide. The quantitative structural analyses by XRD confirms well-crystallized samples with orthorhombic crystal structure based on B2cb space group. Optical properties were measured by a UV–vis spectrometer. The oxygen vacancies presence and the Fe and Co valence states estimation were carried out by electron spin resonance. The incorporation of Co and Fe ions into Bi_3.25Nd_0.75Ti₃O₁₂ significantly modified the bandgap structure, promoting a red-shift and lower energies absorption which was related to the changes in tilting angles, bond lengths, octahedral distortions and oxygen vacancies formation, still maintaining a ferroelectric spontaneous polarization. To our knowledge, it is a new approach to link quantitively the octahedra distortion to the bandgap decreasing for Aurivillius compounds providing a newly available method of manipulating the bandgap tuning on the ferroelectric oxide's materials.

The invention of paper as a writing material greatly promoted the development and spread of civilization. However, its large-scale production and utilization has also brought about huge environmental and sustainability concerns. It is desirable to develop a strategy for paper that can be used in a reprintable manner. In this work, ZnO-based photocatalytic reactions have been applied in preparing a reprintable paper that works through the color conversion of methylene blue. The resulting paper does not require additional ink and can be repeatedly printed for 20 cycles keeping over 77% of the initial contrast ratio. The reprintable raw materials can be retained for more than 2 months in the ambient environment. A fast color-switching time of about 10 s has been achieved, which can be attributed to the high photo-induced electron transfer rate from the ZnO to the dyes.

Group ΙΙΙ nitrides are crucial semiconductors used in optoelectronic applications such as light-emitting diodes, but their efficiency is still limited due to some material problems including dislocations, strain, composition fluctuations and optical polarization properties. Nitride nanowire (NW) structures, showing advantages in these aspects, are a possible method to address the shortcomings of bulk materials and improve device performances. Here we investigated the manipulation of polarization characteristics in wurtzite ΙΙΙ-nitride NWs by controlling the diameter and strain using first-principles calculations. The inversion of valence bands between heavy/light hole and crystal-field split-off hole is induced with decreasing the diameter of AlN and InN NWs, which causes the switch of polarization characteristics from transverse-magnetic (TM) mode of bulk AlN (transverse-electric (TE) mode of bulk InN) to TE mode of small-diameter AlN NWs (TM mode of small-diameter InN NWs, i.e. linearly polarized emission). Moreover, we also obtained the linearly TM polarized emission in AlN and GaN NWs by applying the compressive strain along the NW axis. The physical origin of the polarization inversion is the variation of the structural parameter μ in NWs. Our results illuminate the polarization properties of wurtzite ΙΙΙ-nitride NWs and pave the way for their future optoelectronic devices.

Plasmonic surface lattice resonances (SLRs) supported by metal nanoparticle arrays have a range of appealing characteristics such as extremely narrow linewidths and greatly enhanced near fields, and thus are attractive in diverse applications. Improving the quality factor of SLRs is important for many applications and thus it has been the focus in this field. In this work, we report high quality out-of-plane SLRs supported by two-dimensional metal nanohemisphere arrays embedded in a symmetric dielectric environment. These SLRs, excited under oblique incidence with TM polarization, can have an ultra-narrow resonant linewidth (∼ 0.9 nm) at visible wavelengths around 715 nm. This corresponds to an exceptionally high quality factor of 794, which is ten times that of the widely-adopted nanorods. We attribute this striking performance to the nanohemisphere geometry, which greatly relaxes the stringent requirement on the height of nanoparticles for supporting out-of-plane SLRs, reducing the absorption loss, and in which the out-of-plane oscillations are much stronger than in-plane ones, leading to stronger inter-particle coupling. The tuning of the resonance wavelength and the quality factor can be explained by a qualitative approach based on the detuning between the Rayleigh anomaly and the localized surface plasmon resonance of an isolated nanoparticle. We expect this work will advance the engineering and applications of high quality SLRs.

We theoretically study the interaction of an irradiated ultrafast laser pulse with Dirac fermions in monolayer WSe₂ coupled with an off-resonant light. The optical pulse has a duration of a few femtoseconds and an amplitude of the order $0.1-1\ {\mathrm V}\text{\AA}^{-1}$. Because the electron scattering time is more than the duration of the laser pulse, the electron dynamics driven by the electric field are coherent, and can be described by the time-dependent Schrödinger equation. The two proposed waveforms are described by the Gaussian and Legendre–Gaussian polynomial associated with a carrier-envelope phase (CEP). Quantum electron dynamics in monolayer WSe₂ are highly nonadiabatic, which implies electron transition from the valence band to the conduction band to be deeply irreversible. In particular, we investigate the impact of off-resonant light and CEP on the conduction band population. We show that the electron distribution in reciprocal space represents asymmetric hot spots at the Dirac points, and this strongly depends on the CEP. A significant valley polarization effect is observed owing to the tunable band gap in K and K$^{\prime}$ valleys by the off-resonant light. The predicted phenomena open up roots for the development of ultrafast information processing, storage in petahertz-band optoelectronics and valley-resolved transport.

This study reports the in situ wet chemical synthesis of Al-doped ZnO nanoparticle hybridized graphene (ZnO_Al/G) nanocomposite for the photocatalytic decomposition of methylene blue dye. The graphene-amalgamated Al-doped ZnO sample evidences a more enhanced photocatalytic decomposition performance than the pristine and Al-doped ZnO nanoparticles. Powder x-ray diffraction study reveals the addition of Al and graphene with the ZnO does not alter the hexagonal wurtzite phase of ZnO. Surface morphological results of the ZnO_Al/G nanocomposite obtained from scanning electron microscopy and transmission electron microscopy show that the Al-doped ZnO nanoparticles are fastened firmly to the graphene sheets. The Al and graphene inclusion does not alter the absorption onset of the ZnO, except for an enhanced light absorption in the visible region. The ZnO_Al/G nanocomposite imparts a higher photocatalytic decomposition rate constant (k) of about 0.0214 m⁻¹, while the values of pristine and Al-doped ZnO nanoparticles are about 0.0143 and 0.0129 m⁻¹, respectively. A plausible decomposition mechanism for the augmented photocatalytic performance of the ZnO_Al/G nanocomposite has been discussed in detail.

Although non-thermal plasma (NTP) has been proved to be an effective way to kill cancer cells, the mechanism of NTP-induced cancer cell death is still not clear. In this study, we found that NTP exposure caused reactive oxygen species generation and apoptosis in A549 and MDA-MB-231 cells. Meanwhile, NTP treatment also induced autophagy, as evidenced by the formation of acidic vesicular organelles and conversion of LC3-I to LC3-II. Suppression of autophagy by chloroquine significantly increased NTP-induced cell death, indicating that NTP-induced autophagy acted in a protective role from apoptosis. Furthermore, NTP treatment significantly increased Sestrin2 (Sesn2) expression and activated the JNK signaling pathway. Knocking down Sesn2 with special siRNA enhanced NTP-induced cell death, while pretreatment with JNK inhibitor abolished the increase of Sesn2 and LC3 formation, and promoted cell apoptosis induced by NTP. These indicated that the JNK/Sesn2 pathway was involved in autophagy and apoptosis induced by NTP. These findings provided evidence that supplement with autophagy inhibition might be a useful strategy to improve the tumor cell killing effect of NTP.

Surface dielectric barrier discharge (SDBD) actuators driven by the pulsed-DC voltages are analyzed. The pulsed-DC SDBD studied in this work is equivalent to a classical SDBD driven by a tailored fast-rise–slow-decay (FRSD) voltage waveform. The plasma channel formation and charge production process in the voltage rising stage are studied at different slopes using a classical 2D fluid model, the thrust generated in the voltage decaying stage is studied based on an analytical approach taking 2D model results as the input. A thrust pulse is generated in the trailing edge of the voltage waveform and reaches maximum when the voltage decreases by approximately the value of cathode voltage fall (≈ 600 V). The time duration of the rising and trailing edge, the decay rate and the amplitude of applied voltage are the main factors affecting the performance of the actuator. Analytical expressions are formulated for the value and time moment of peak thrust, the upper limit of thrust is also estimated. Higher voltage rising rate leads to higher charge density in the voltage rising stage thus higher thrust. Shorter voltage trailing edge, in general, results in higher value and earlier appearance of the peak thrust. The detailed profile of the trailing edge also affects the performance. Results in this work allow us to flexibly design the FRSD waveforms for an SDBD actuator according to the requirements of active flow control in different application conditions.

The spatial and temporal distribution of the discharge streamers in positive pulsed wire-to-wire electrode configuration in atmospheric air is investigated by an electrical-optical diagnostic system. Time-resolved ICCD images show that the discharge streamers in wire-to-wire electrode develop in three phases: the primary streamer, the secondary positive streamer, and the secondary negative streamer. It is observed that the evolution of discharge streamers is strongly influenced by the amplitude of the applied voltage. The optical emission spectroscopy measurement of hydroxyl radical OH indicates that the OH is mainly generated in the secondary positive streamer near the anode region. But in the region near the cathode the emission of OH radicals can also be detected due to the secondary negative streamer. The influences of rise time, fall time and pulse duration on streamer dynamics and the subsequent radical production are observed. It is shown that the average propagation velocity of the primary streamer decreases with the increase of the rise time, while the variation of pulse width and pulse duration parameters have little effect on that of the primary streamer. The response surface methodology based on Box–Behnken design model is implemented to evaluate the contribution of the three critical pulse parameters on ozone production. The results of the response surface quadratic model show that the pulse rise time plays the most prominent role in the generation of ozone among the three pulse parameters of rise time, fall time and pulse duration.

The production of negative ions is of significant interest for applications including mass spectrometry, particle acceleration, material surface processing, and neutral beam injection for magnetic confinement fusion. Methods to improve the efficiency of the surface production of negative ions, without the use of low work function metals, are of interest for mitigating the complex engineering challenges these materials introduce. In this study we investigate the production of negative ions by doping diamond with nitrogen. Negatively biased (−20 V or −130 V), nitrogen doped micro-crystalline diamond films are introduced to a low pressure deuterium plasma (helicon source operated in capacitive mode, 2 Pa, 26 W) and negative ion energy distribution functions are measured via mass spectrometry with respect to the surface temperature (30 °C to 750 °C) and dopant concentration. The results suggest that nitrogen doping has little influence on the yield when the sample is biased at −130 V, but when a relatively small bias voltage of −20 V is applied the yield is increased by a factor of 2 above that of un-doped diamond when its temperature reaches 550 °C. The doping of diamond with nitrogen is a new method for controlling the surface production of negative ions, which continues to be of significant interest for a wide variety of practical applications.

This work explores the use of an atmospheric pressure, low temperature, cold non-thermal plasma (obtained by dielectric barrier discharge (DBD)) to achieve a water-gas shift (WGS) reaction (CO + H₂O H₂ + CO₂). This work establishes the use of a DBD to generate hydroxyl radicals that initiate and enhance the WGS reaction at low temperatures. The effect of the steam to CO molar ratio (MR) and the gas residence time on the CO conversion (X_CO) to H₂ is studied. The results show that, at an MR of 20, with 2600 ms of gas residence time and a plasma power of 70 W, a maximum CO conversion of 63 ± 4% can be achieved with an H₂ concentration of 48 ± 2 mol% in the product. Preliminary studies of reaction pathways for the enhanced hydrogen formation confirm the role of C formed from the CO₂ dissociation. A reaction mechanism for the plasma WGS reaction is proposed and the hydrogen yield is calculated.

Optically stimulated luminescence (OSL) and thermoluminescence (TL) from the metastable states in solids are widely used in luminescent phosphors, dosimetry, geochronology, and thermo- and photo-chronometry. OSL and TL result from a combination of three different processes (charge detrapping, transport, and recombination) and are, therefore, not ideal for characterizing the charge trapping states. Therefore, despite many decades of research, the OSL and TL kinetics and the associated defect systems remain poorly understood in natural minerals. Recently, a radio-photoluminescence (RPL) signal has been discovered in feldspar (K-Na-Ca aluminosilicates occupying > 50% of Earth's crust) which helps overcome this limitation. This site-selective signal termed infrared photoluminescence (IRPL) arises from radiative relaxation of the excited state of the main electron trapping center (principal trap).

In this study, IRPL excitation and emission spectroscopy at cryogenic temperatures reveals two distinct electron-trapping centers (i.e. two principal traps) in feldspar, and helps to determine their trap depths and the excited-state energies. The two trapping centers show the same electron capture cross-sections and the excited-state relaxation lifetimes, but different ground- and excited-state energies. Based on this peculiar combination of trap characteristics, we conclude that that the principal traps consist of the same defect residing at two different crystal sites. The differences in the energy levels of the two principal traps explain their distinct optical and thermal bleaching behavior.

Spin transport features of zigzag phosphorene nanoribbons (ZPNRs) are investigated in the presence of the perpendicular electric field (${E_z}$), the exchange field ${\left( M \right)}$, and Rashba spin–orbit interaction (RSOI). To this end, the non-equilibrium Green's function method is used based on the tight-binding model, which can be described by the Landauer–Büttiker formalism. Interestingly, spin-filtering and spin-flipping are observed only for incoming up (down) spins in the presence of the exchange field with anti-parallel configuration (parallel configuration). Furthermore, changing the magnitude and direction of ${E_z}$ for the parallel and anti-parallel configurations of the exchange field in the presence of RSOI can induce and control the ON/OFF state of the current, the band gap, the spin polarization, spin-flipping, and spin-filtering in the system. The obtained results could be utilized to construct novel nanostructures and also to maximize the efficiency of spintronic devices based on ZPNRs.

Active plasmonics is a recent area of advancement in decade-old plasmonic technology. The plasmonic response is the function of material optical properties and dimensions, which is fixed after the fabrication, so to actively tune the plasmonic resonance external agent is needed. This work studies a gallium core–shell nanoparticle (NP) spherical structure with a native oxide shell of a few nanometers followed by a shell of liquid and core of solid. The dimension of phases in a NP can be reversibly controlled by varying temperature providing the ability to switch the plasmonic response. The results show a monotonous decrease in extinction cross-section at the resonances as liquid shell size decreases, and lossy core increases providing a new pathway for the control over optical properties of the system. This work explores the phase-change plasmonics in Ga NP which is chemically stable material especially in UV where gold and silver are lossy and Al is chemically unstable. Perspectives of the approach for thermal sensors and temperature-dependent plasmonic switches are discussed.

This paper presents an application of stochastic resonance for improving the performance of micro-electromechanical system (MEMS) cantilever biosensors operating in liquid media. The hydrodynamic influences in liquid media that consist of added mass effect, viscous damping and squeeze film damping deteriorate the Q-factor of cantilever oscillator sensors so much that their operation under fluid-immersed conditions becomes impractical. The stochastic resonance can be produced by the addition of noise in two ways: one, by direct transfer of noise energy through some nonlinear interaction process with the oscillator; and second, by making intrinsic parameters of the oscillator noisy. In this work, we are concerned with the second approach where MEMS controlled feedback oscillator is the biosensor. The cantilever motion is modeled as a damped harmonic oscillator with its natural frequency and damping coefficient parameters made noisy for generating stochastic resonance. Both the frequency and the damping noises generate stochastic resonance in the oscillator amplitude; however, the damping noise generates an additional resonance effect in the oscillator phase. The latter creates the possibility for improving Q-factor against the detrimental influences of hydrodynamic loading. This is a novel feature, which we explore in this paper for maintaining self-sustained cantilever oscillations in a liquid medium and for enhancing biosensor performance. The biosensor model takes into account the circuit loading effect and the influence of cantilever noise in hydrodynamic environment as well. The analytical relations for mass sensitivity and limit of detection have been obtained. The limit of detection is found to be inversely proportional to $\left| a \right|Q\sqrt {1 + 1/2{Q^2}}$ where $\left| a \right|$ and $Q$ denote cantilever amplitude and Q-factor, respectively. That means the phase stochastic resonance produced by the addition of damping noise lowers the limit of detection by enhancing both $\left| a \right|$ and $Q$. A prototype theoretical analysis with a Si-MEMS cantilever ($250 \times 35 \times 2$μm³ dimensions and 10 μm gap from boundary wall) oscillator sensor in aqueous medium shows 2 to 3 orders of magnitude enhancement in the Q-factor and 4 to 5 orders of magnitude improvement in the limit of mass detection.