Abstract
The formation of thin alumina films directly on Si is reported. Galvanostatic and potentiostatic anodization in two- and three- electrode cell configurations are compared. Control of the electrode potential with a 3-electrode setup provides faster pore formation and organization than with control of the cell potential in a 2-electrode configuration. Higher pore density and smaller pore sizes are obtained for potentiostatic control than for galvanostatic control. Internal consistency was found between equations describing the steady-state current-voltage characteristics and the pore density and size.