(Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C

Roberta Nipoti; Mariaconcetta Canino; Maurizio Puzzanghera; Giovanna Sozzi

doi:10.1149/08007.0101ecst

ECS Transactions

(Invited) Thermal Stability of 1×10²⁰ cm^-3 Al⁺ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C

Roberta Nipoti¹, Mariaconcetta Canino², Maurizio Puzzanghera³ and Giovanna Sozzi³

© 2017 ECS - The Electrochemical Society
ECS Transactions, Volume 80, Number 7 Citation Roberta Nipoti et al 2017 ECS Trans. 80 101 DOI 10.1149/08007.0101ecst

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¹ CNR-IMM Bologna

² CNR-IMM of Bologna

³ DIA - Università di Parma

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Abstract

The effect of a 1500 °C treatment on 1×10²⁰ cm^-3 Al⁺ ion implanted in 4H-SiC samples that have been previously annealed at 1850-1950 °C is studied in this work. Up to 240 min annealing time at 1500 °C, the Al electrical activation reached at 1850-1950 °C is preserved.

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