Abstract
A new model of the roughness correlation function S(r) has been proposed in order to explain the different behavior of high field mobility limited by surface roughness scattering, µSR, between electrons and holes in metal oxide semiconductor field effect transistors (MOSFETs) with oxynitrides. It has been shown, for the first time, that the change in electron and hole µSR associated with NO oxynitridation can be reasonably well explained by the appropriate choice of the form of S(r).