Abstract
It is generally difficult to obtain subsurface information by scanning probe microscopy. For certain tip conditions, we observe subsurface back-bond atoms on the Si(111)-(7×7) surface by atomic force microscopy without removing Si adatoms. We propose an imaging mechanism that is based on the interaction of the adatom with the back-bond atoms. Our model is supported by simultaneously obtained tunneling current and energy dissipation images, which show significant relaxation of adatoms.