Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates

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Published 25 January 2008 • ©2008 The Japan Society of Applied Physics
, , Citation Yonkil Jeong et al 2008 Appl. Phys. Express 1 021201 DOI 10.1143/APEX.1.021201

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1 Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

Dates

  1. Received 28 November 2007
  2. Accepted 24 December 2007
  3. Published

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Abstract

We have carried out epitaxial lift-off (ELO) of In0.57Ga0.43As/In0.56Al0.44As metamorphic high electron mobility heterostructures and their van der Waals bonding (VWB) on AlN ceramic substrates. Using a metamorphic heterostructure with an AlAs sacrificial layer and an InGaAs graded buffer grown on GaAs(001), thin film Hall-bar devices on AlN ceramic substrates were successfully fabricated by ELO and VWB. The Hall-bar devices exhibit very high electron mobilities, such as 11000 cm2/(V s) at room temperature (RT) and 84000 cm2/(V s) at 12 K. The RT mobility is the highest ever reported for ELO devices. This is the first report on ELO for metamorphic devices.

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