Mechanochemical synthesis and physico–chemical investigations of new materials for gas sensors

Solid solutions of the InSb-ZnTe semiconductor system containing up to 20 mol.% of ZnTe were synthesized for the first time. The role of mechanochemical treatment in the process of obtaining solid solutions of this system is shown. Solid solutions in the InSb-ZnTe system have been identified by Raman spectroscopy, and the optical properties of its components have been studied. On the basis of an analysis of the anti-stokes spectral radiation distribution the solid solutions formation was identified both on the dependence of the spectral distribution maximum's shift on the composition of the InSb_1-x-ZnTe_x system, and by estimating the radiation intensity of the initial binary semiconductors at frequencies corresponding to the LO- and TO- vibrations of the binary compounds crystal lattice. The values of the band gap for InSb, (InSb)_0.95(ZnTe)_0.05 and (InSb)_0.9(ZnTe)_0.1 were calculated, their values were 0.22 eV, 0.30 eV and 0.38 eV, respectively.