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The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

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, , Citation V A Varlachev et al 2016 IOP Conf. Ser.: Mater. Sci. Eng. 135 012047 DOI 10.1088/1757-899X/135/1/012047

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1 National Research Tomsk Polytechnic University, 30, Lenina Avenue, Tomsk, 634050, Russia

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1757-899X/135/1/012047

Abstract

The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD.

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10.1088/1757-899X/135/1/012047