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Planar nanosized field emission cathodes on the basis of graphene/semi-insulating silicon carbide fabricated by focused ion beam

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, , Citation L Jityaev et al 2016 J. Phys.: Conf. Ser. 741 012011 DOI 10.1088/1742-6596/741/1/012011

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1 Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering, Taganrog, 347922, Russia

2 Southern Federal University, Scientific and Design Bureau of Modelling and Controlling Systems, Taganrog, 347928, Russia

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1742-6596/741/1/012011

Abstract

We investigate the field emission properties of planar graphene structures with nanosized interelectrode distance. The graphene was obtained by thermal decomposition of silicon carbide in vacuum. Planar field emission structures on the basis of graphene on semiinsulating SiC were fabricated by using focused ion beam. We have performed current-voltage measurement on graphene/SiC field emission cathodes. The planar field emission structures showed a threshold voltage less than 1 V.

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10.1088/1742-6596/741/1/012011