Abstract
Porous silicon (PS) used as a substrate for thin films of pure zinc oxide and ZnO:Al for tow type of (PS): n and p, prepared approximately 450oC by using technique of Spray Pyrolysis(SP) by heat deposition for different doping of with thickness equal to (150 nm). Where the bandgap of energy for the (PS) substrate can calculate by the electrons pumping using Photoluminuce, which it was equal to 2.397 eV. Morphology of up view side of the deposited thin films on the n and p-type of the (PS) has been studied by SEM, AFM, and TEM. The sensitivity of the ZnO pure and ZnO: Al for the prepared thin films for CO gas has been calculated, which it was increased with the rise of concentrations of doping by aluminum, where the sensitivity of n-type of porous silicon is larger than p-type of porous silicon substrate.
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