Abstract
The object of research is a resonance-tunneling diode (RTD) based on multilayer AlGaAs heterostructures. A software complex with high-speed algorithm modeling the RTD current-voltage (I-V) characteristic's initial section with the possibility of carrying out a computer statistical experiment for studying the effect of technological errors of the diode design parameters on its I-V characteristic is submitted; the results of such study are shown
Export citation and abstract BibTeX RIS
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.