Abstract
Created HEMT based on the structures of the AlGaN/SiC. Was studied all the basic characteristics of the transistors and determine their operating parameters, including power, Gm, delay time, current saturation, etc. A study was made of the degradation of the characteristics of transistors under stress conditions of operation. Modes of express testing were found that allow to estimate the reliability of HEMT. Based on the results of the field distribution simulation was carried out near the gate for a more detailed description of the degradation mechanisms.
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