Table of contents

Rectifiers have been used to detect electromagnetic waves with very low photon energies. In these rectifying devices, different methods have been utilized, such as adjusting the bandgap and the doping profile, or utilizing the contact potential of the metal–semiconductor junction to produce current flow depending on the direction of the electric field. In this paper, it is shown that the asymmetric application of nano-electrodes to a metal–semiconductor–metal (MSM) structure can produce such rectification characteristics, and a terahertz (THz) wave detector based on the nano-MSM structure is proposed. Integrated with a receiving antenna, the fabricated device detects THz radiation up to a frequency of 1.5 THz with responsivity and noise equivalent power of 10.8 V/W and $100\,{\rm{pW}}/\sqrt{{\rm{Hz}}},$ respectively, estimated at 0.3 THz. The unidirectional current flow is attributed to the thermionic emission of hot carriers accelerated by the locally enhanced THz field at the sharp end of the nano-electrode. This work not only demonstrates a new type of THz detector but also proposes a method for manipulating ultrafast charge-carrier dynamics through the field enhancement of the nano-electrode, which can be applied to ultrafast photonic and electronic devices.

The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration of 2D nitride materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin nitride layers through a two-step process involving the synthesis of naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads to an atomic-exchange of the chalcogen and nitrogen species in the 2D-GIIICs. The effect of nitridation differs for gallium and indium selenide, where gallium selenide undergoes structural changes and eventual formation of ultra-thin GaN, while indium selenide layers are primarily etched rather than transformed by nitridation. Further investigation of the resulting GaN films indicates that ultra-thin GaN layers grown on silicon dioxide act as effective 'seed layers' for the growth of 3D GaN on amorphous substrates.

A method for cross-sectional doping of individual Si/SiO₂ core/shell nanowires (NWs) is presented. P and B atoms are laterally implanted at different depths in the Si core. The healing of the implantation-related damage together with the electrical activation of the dopants takes place via solid phase epitaxy driven by millisecond-range flash lamp annealing. Electrical measurements through a bevel formed along the NW enabled us to demonstrate the concurrent formation of n- and p-type regions in individual Si/SiO₂ core/shell NWs. These results might pave the way for ion beam doping of nanostructured semiconductors produced by using either top-down or bottom-up approaches.

Doping can effectively regulate the electrical and optical properties of two-dimensional semiconductors. Here, we present high-quality Pb-doped SnSe₂ monolayer exfoliated using a micromechanical cleavage method. X-ray photoelectron spectroscopy measurement demonstrates that Pb content of the doped sample is ∼3.6% and doping induces the downward shift of the Fermi level with respect to the pure SnSe₂. Transmission electron microscopy characterization exhibits that Pb_0.036Sn_0.964Se₂ nanosheets have a high-quality hexagonal symmetry structure and Pb element is uniformly distributed in the nanosheets. The current of the SnSe₂ field effect transistors (FETs) was found to be very difficult to turn off due to the high electron density. The FETs based on the Pb_0.036Sn_0.964Se₂ monolayer show n-type behavior with a high on/off ratio of 10⁶ which is higher than any values of SnSe₂ FETs reported at the moment. The estimated carrier concentration of Pb_0.036Sn_0.964Se₂ is approximately six times lower than that of SnSe₂. The results suggest that the method of reducing carrier concentration by doping to achieve high on/off ratio is effective, and Pb-doped SnSe₂ monolayer has significant potential in future nanoelectronic and optoelectronic applications.

In this study, we introduce a novel graphene oxide/silver/arginine (GO/Ag/Arg) nanohybrid structure, which can act as an angiogenesis promoter and provide antibacterial nanostructure for improving the wound healing process. GO/Ag nanostructure has been optimized in terms of the GO/Ag mass ratio and pH values using central composite design and the response surface method to increase the Ag loading efficiency. Then, Arg was chemically introduced to the surface of GO/Ag nanostructure. Electrospun polycaprolactone (PCL)-GO/Ag/Arg nanocomposite was successfully fabricated and characterized. The synthesized nanocomposite demonstrated not only a great antibacterial effect on both Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) bacterial species, but appropriate biocompatibility against L929 fibroblastic cell lines. The results demonstrated that the preparation of the PCL-GO/Ag/Arg nanocomposite at a concentration of 1.0 wt% GO/Ag/Arg possessed the best biological and mechanical features. In vivo experiments also revealed that the use of optimized PCL-GO/Ag/Arg nanocomposite, after 12 d of treatment, led to significant increase in the healing process and also regeneration of the wound via reconstruction of a thickened epidermis layer on the wound surface, which was confirmed by histological analysis. In conclusion, the proposed approach can introduce a novel notion for preparing antibacterial material that significantly promotes angiogenesis.

Manipulation of carrier densities at the single electron level is inevitable in modern silicon based transistors to ensure reliable circuit operation with sufficiently low threshold-voltage variations. However, previous methods required statistical analysis to identify devices which exhibit random telegraph signals (RTSs), caused by trapping and de-trapping of a single electron. Here, we show that we can deliberately introduce an RTS in a silicon nanowire transistor, with its probability distribution perfectly controlled by a triple gate. A quantum dot (QD) was electrically defined in a silicon nanowire transistor with a triple gate, and an RTS was observed when two barrier gates were negatively biased to form potential barriers, while the entire nanowire channel was weakly inverted by the top gate. We could successfully derive the energy levels in the QD from the quantum mechanical probability distributions and the average lifetimes of RTSs. This study reveals that we can manipulate individual electrons electrically, even at room temperature, and paves the way to use a charged state for quantum technologies in the future.

Electron beam patterning is an important technology in the fabrication of miniaturized photonic devices. The fabrication process conventionally involves the use of radiation sensitive polymer-based solutions (called resists). We propose to replace typical polymer resists with eco-friendly solvent-free room temperature ionic liquids (RTILs), which are polymerized in situ and solidified by an electron beam. It is demonstrated that the shapes of polymerized structures are different for high-viscous Cl-based RTILs and low-viscous NTf₂-based RTILs. Due to the the satisfactory quality of the polymerized spatial microstructures and their light transmission properties, the RTIL-derived microstructures are potentially attractive as photonic elements for near-infrared.

A 3D RuO₂/Mn₂O₃/carbon nanofiber (CNF) composite has been prepared in this study by a facile two step microwave synthesis, as a bi-functional electrocatalyst towards oxygen reduction reaction (ORR) and oxygen evolution reaction (OER). RuO₂ nanoparticles with the mean size of 1.57 nm are uniformly distributed on Mn₂O₃ nano-rods grown on electrospun CNFs. The electrocatalytic activity of the composites are investigated towards ORR/OER under alkaline condition. The ternary RuO₂/Mn₂O₃/CNF composite showed superior ORR activity in terms of onset potential (0.95 V versus RHE) and Tafel slope (121 mV dec⁻¹) compared to its RuO₂/CNF and Mn₂O₃/CNF counterparts. In the case of OER, the RuO₂/Mn₂O₃/CNF exhibited 0.34 V over-potential value measured at 10 mA cm⁻² and 52 mV dec⁻¹ Tafel slope which are lower than those of the other synthesized samples and as compared to state of the art RuO₂ and IrO_x type materials. RuO₂/Mn₂O₃/CNF also exhibited higher specific capacity (9352 mAh ${{g}_{{\rm{carbon}}}}^{-1}$) than CNF (1395 mAh ${{g}_{{\rm{carbon}}}}^{-1}$), Mn₂O₃/CNF (3108 mAh ${{g}_{{\rm{carbon}}}}^{-1}$) and RuO₂/CNF (4859 mAh g_carbon⁻¹) as the cathode material in Na–O₂ battery, which indicates the validity of the results in non-aqueous medium. Taking the benefit of RuO₂ and Mn₂O₃ synergistic effect, the decomposition of inevitable side products at the end of charge occurs at 3.838 V versus Na/Na⁺ by using RuO₂/Mn₂O₃/CNF, which is 388 mV more cathodic compared with CNF.

We demonstrated a single-material multifunctional sensor using ZnO nanorods, which is capable of mimicking the five human senses. A simple method for the growth of ZnO nanorods and their application as a multifunctional sensor was studied. High-density ZnO nanorods were synthesized by the carbothermal transport method on a graphene catalyst. To optimize the sensing mechanisms, we investigated ZnO nanostructure growth under two oxygen flow rates. ZnO nanorods as sensors for smell, light, sound, touch, and taste, the five human senses, showed stable electrical signals under standard ambient conditions.

Controlling the formation of ZnO nanowire (NW) arrays on a wide variety of substrates is crucial for their efficient integration into nanoscale devices. While their nucleation and growth by chemical bath deposition (CBD) have intensively been investigated on non-polar and polar c-plane ZnO surfaces, their formation on alternatively oriented ZnO surfaces has not been addressed yet. In this work, the standard CBD technique of ZnO is investigated on $(10\bar{1}2)$ and $(20\bar{2}1)$ semipolar ZnO single crystal surfaces. A uniform nanostructured layer consisting of tilted ZnO NWs is formed on the $(10\bar{1}2)$ surface while elongated nanostructures are coalesced into a two-dimensional compact layer on the $(20\bar{2}1)$ surface. By further combining the CBD with selective area growth (SAG) using electron beam-assisted lithography, highly tilted well-ordered ZnO NWs with high structural uniformity are grown on the $(20\bar{2}1)$ patterned surface. The structural analysis reveals that ZnO NWs are homoepitaxially grown along the polar c-axis. The occurrence of quasi-transverse and -longitudinal optical phonon modes in Raman spectra is detected and their origin and position are explained in the framework of the Loudon's model. These results highlight the possibility to form ZnO NWs on original semipolar ZnO surfaces. It also opens the way for comprehensively understanding the nucleation and growth of ZnO NW arrays on poorly and highly textured polycrystalline ZnO seed layers composed of nanoparticles with a wide range of non-polar, semipolar, and polar plane orientations. Eventually, the possibility to tune both the inclination and dimensions of well-ordered ZnO NW arrays by using SAG on semipolar surfaces is noteworthy for photonic and optoelectronic nanoscale devices.

Nanotubes fold due to the competition between their mechanical stability and van der Waals interactions. The caused dramatic morphology change promises exciting applications of nanotubes in responsive and reconfigurable nanodevices. To investigate the folding mechanism, a curvature-based finite-deformation theoretical model simultaneously considering both the folding of a nanotube and the possible collapsing of the cross-section is developed. The predicted critical condition and the profiles in both axial and transverse directions agree well with molecular dynamics (MD) solutions, demonstrating that the cross-sectional deformation should be taken into account when investigating the folding of a nanotube with a large diameter. Moreover, simple scaling laws of the critical conditions are proposed through a small-deformation theoretical model. With these scaling laws, one can easily and quickly determine both the collapsing state of the cross-section and the folding state of the nanotube with only geometrical parameters ${L}_{{\rm{total}}},D,t\,{\rm{and}}\,n$ rather than the difficult-to-determine material properties $EI\,{\rm{and}}\,\gamma .$

The mechanism underlying the effect of growth condition on the morphology evolution of InGaN nanorods (NRs) has been systematically investigated. The increased Ga flux enhances both the axial and the radial growth at the growth stage. However, the changed Ga flux influences not only the growth but also the nucleation of InGaN NRs. At the nucleation stage, the increased Ga flux shortens the delay time for NR formation, and prolongs the growth stage for a fixed total growth time. Those two aspects result in the increase of NR diameter and height with the supplied Ga flux. In addition, the continuous nucleation is ended much earlier due to the accelerated saturation of substrate area with the increased Ga flux, resulting in a decreased final NR density. In addition to the morphology evolution with the Ga flux, the composition characteristic of InGaN NRs has been also studied. The In distribution of InGaN NRs depends critically on the NR diameter along the NR growth direction, and the NRs show a morphology-dependent In incorporation. Interestingly, the InGaN NRs discussed here show a radial Stark effect induced by the pinned Fermi level. The radial Stark effect shifts the absorption edge of the InGaN NRs toward longer wavelengths, makes the InGaN NRs attractive for photoelectrochemical water splitting applications. The photoelectrochemical measurements present a significant increase in the photocurrent with the increased total surface area of the InGaN NRs, which is due to the enhanced light absorption effects and the enlarged interfacial area of the semiconductor/electrolyte.

A therapeutic reduced graphene oxide (RGO) is synthesized by using fucoidan (Fu) as the reducing and surface functionalizing agent. The synthesized Fu–RGO exhibits promising characteristics for therapeutic applications such as high dispersity in aqueous media, biocompatibility, selective cytotoxicity to cancer cells, high loading capacity of the anticancer drug, and photothermal conversion effect. Therefore, Fu–GO is successfully harnessed as a combinatorial cancer treatment platform through bio-functional (Fu), chemo (doxorubicin (Dox)) and photothermal (RGO with near-infrared irradiation) modalities.

In this study, mineral oil–water fluid miscibility without and with the addition of surfactant-decorated nanoparticles is experimentally and theoretically studied. First, three series of interfacial tension (IFT) tests are conducted using a spinning drop tensiometer (SDT) with the addition of hexadecyltrimethylammonium bromide (CTAB) surfactant-decorated SiO₂ nanoparticles at different concentrations. Second, a new comprehensive thermodynamic model is developed to describe the fluid miscibility without and with the addition of these surfactant-decorated nanoparticles, which is also applied theoretically to reveal how the surfactant-decorated nanoparticles contribute to the thermodynamic miscibility state. The thermodynamic model developed is proven to be accurate and physically meaningful by comparing its calculated free energy of mixing with the experimental results and examples from the literature. A series of optimum conditions for the improvement of fluid miscibility by the addition of such surfactant-decorated nanoparticles are determined: a lower temperature, a higher pressure, more wetting conditions, a smaller nanoparticle radius (r_NP < 40 nm), a larger surfactant concentration, and a nanoparticle concentration in the range of 0.5–0.6 wt.%. It should be noted that a higher nanoparticle concentration is required with the addition of more CTAB surfactants in order to reach the most miscible state. Moreover, the effect of surfactant concentration on the miscibility development is found to be independent of the nanoparticle radius, whereas the optimum nanoparticle concentration is reduced with increasing particle size.