Corrigendum: "Full-band Monte Carlo analysis of strain effects on carrier transport in GaN" [Jpn. J. Appl. Phys. 63 02SP35 (2024)]

We found a miscalculation in the original paper referenced in the title. When calculating the impact ionization coefficient of electrons α_n in the original paper,

$$\begin{eqnarray*}&&{W}_{\mathrm{ii}}(E)=A{\left(\displaystyle \frac{E-{E}_{{\rm{g}}}}{{E}_{{\rm{g}}}^{0}}\right)}^{B},\quad (E\gt {E}_{{\rm{g}}})\end{eqnarray*}$$

was used incorrectly as the impact ionization rate instead of Eq. (28) in the paper. Here, ${E}_{{\rm{g}}}^{0}$ is the bandgap for the unstrained case. This resulted in the different strain dependence of the impact ionization rate for electrons and holes. Also, the parameter A = 6.77 × 10¹² s⁻¹ in the original paper was incorrect since it was obtained not with the adopted literature value ${E}_{{\rm{g}}}^{0}=3.39\ \mathrm{eV}$ but with the larger ${E}_{{\rm{g}}}^{0}=3.53\ \mathrm{eV}$ by our tight-binding calculation: the correct value for Eq. (28) is A = 5.01 × 10¹² s⁻¹. Because of these errors, the calculation results in Sect. 3.4 of the original paper should be corrected.

We have performed recalculations of α_n using the impact ionization rate of Eq. (28) in the original paper. In the recalculation, the accuracy has been improved by finer energy discretization. The recalculation results of Fig. 11 are shown below. The fitting parameters in Eq. (31) in the paper for the strain dependence of α_n obtained from the recalculated results are also shown in Table V below. Figure 12, which has been recalculated from Fig. 11 of this Corrigendum, is also shown above. Although the strain dependence shown in Fig. 12(d) is relatively different from that in the original paper, the maximum change in breakdown field due to 2% strain is less than 4% under all the conditions in Fig. 12. Considering the magnitude of the strain, this result means that the strain dependence remains small. Therefore, the conclusion does not change: the strain does not degrade breakdown characteristics.

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Table V. The recalculated parameters in Eq. (31) for the strain dependence of the impact ionization coefficients of electrons α_n and holes α_p. Parameters for both 〈0001〉 and $\langle 1\bar{1}00\rangle$ directions are shown for uniaxial and biaxial strains, respectively. For holes, the results shown are the same as in the original paper.

		Uniaxial strain		Biaxial strain
		〈0001〉	$\langle 1\bar{1}00\rangle$	〈0001〉	$\langle 1\bar{1}00\rangle$
αn	a (106 cm−1)	4.77	4.42	3.72	3.97
	b	3.71	−0.10	−16.1	−1.52
	c (107 V cm−1)	1.83	1.96	1.75	1.91
	d	−2.00	0.27	−3.19	−4.52
αp	a (106 cm−1)	1.52	2.02	1.59	1.88
	b	2.09	0.79	−0.58	1.91
	c (107 V cm−1)	1.06	1.09	1.07	1.07
	d	2.36	−0.045	−2.59	0.43