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An Optical Absorption Property of Highly Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy

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Copyright (c) 1992 The Japan Society of Applied Physics
, , Citation Noriyuki Yokouchi et al 1992 Jpn. J. Appl. Phys. 31 1255 DOI 10.1143/JJAP.31.1255

1347-4065/31/5R/1255

Abstract

The optical absorption property of highly beryllium (Be)-doped GaInAsP (λg=1.31 µm, p=2×1019 cm-3) grown by chemical beam epitaxy (CBE) was investigated. The absorption coefficient was estimated from the transmissivity of a Fabry-Perot resonator formed by selective etching of an InP substrate. We found a fairly large absorption (α\cong400 cm-1) in Be-doped material in the longer wavelength region (λ>1.35 µm).

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10.1143/JJAP.31.1255