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Growth of Co Nanoclusters on Si3N4 Surface Formed on Si(111)

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Published under licence by IOP Publishing Ltd
, , Citation Liu Xi et al 2003 Chinese Phys. Lett. 20 1871 DOI 10.1088/0256-307X/20/10/362

0256-307X/20/10/1871

Abstract

We have grown high density Co clusters with a narrow-sized distribution on the Si3N4(0001)-(8×8) surface. In the submonolayer regime, Co clusters tend to keep a certain size (~1.45 nm in diameter) irrespective of coverage. With increasing coverage above 0.92 ML, two new clusters with certain but larger sizes are formed. This novel growth behaviour can be explained by the quantum size effect [Phys. Rev. Lett. 90 (2003) 185506]. It is found that the Co cluster size distribution can be improved by post annealing. Even at high temperature (700°C), no reaction of Co with Si3N4 is observed, indicating that Si3N4(0001)-(8×8) is a promising substrate for growth of magnetic nanostructures.

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10.1088/0256-307X/20/10/362