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In this paper, we report on the enhanced light extraction efficiency (LEE) of AlInN nanowire ultraviolet light-emitting diodes (LEDs) at an emission wavelength of 283 nm using the surface passivation approach and hexagonal photonic crystal structures. Several dielectric materials including SiO₂, Si₃N₄, HfO₂, AlN, and BN, have been investigated as the surface passivation layer for the AlInN nanowire LEDs. The LEDs using these dielectric materials show significantly improved LEE compared to that of the unpassivated ultraviolet nanowire LEDs. With a 35nm Si₃N₄ as surface passivation, the AlInN LED could achieve a LEE of ~ 42.6%, while the unpassivated LED could only have an average LEE of ~ 25.2%. Moreover, the LEE of the AlInN nanowire LEDs could be further increased using hexagonal photonic crystal structures. The periodically arranged nanowire LED arrays could reach up to 63.4% which is almost two times higher compared to that of the random nanowire LEDs. Additionally, the AlInN nanowire ultraviolet LEDs exhibit highly transverse-magnetic polarized emission.

In the present research work, the influence of Fin width thickness variation on the electrical performance parameters have been performed for the 14-nm FinFET device. Various Fin angle (i.e., θ) have been considered to analyze the effect of Fin thickness. All the analyzed results have been compared with the ideal FinFET (i.e., θ = 0⁰) device to observe the effect of angle variation on threshold voltage (V_TH), transconductance (g_m), Gate current (I_G) and Drain Induced Barrier Lowering (DIBL). In addition, the impact of Fin width thickness variations has been used to realize the inverter Voltage Transfer Characteristics (VTC). The characteristics comparison reveals that including the effect of Fin width improves the device performance of FinFET devices.

Atomically-thin semiconducting transitional metal dichalcogenides (TMDCs) are promising channel materials for future ultra-scaled electronic devices due to their high electron mobility attained at sub-nanometer thickness. In particular, monolayer WS₂ has shown the highest theoretical room temperature electron mobility among other semiconducting TMDCs as a result of its low effective mass. However, it is still challenging to grow large-area and strictly monolayer WS₂ through the conventional chemical vapor deposition (CVD) due to the uncontrollable growth kinetics. In this work, we provide a modified CVD process to prepare the uniform and large-area monolayer TMDCs. Theoretical simulations were performed to understand the fundamental thermodynamically mechanism of the monolayer growth. The property-variation in TMDCs due to difference in electronic structure between different layers of TMDCs can be significantly reduced based on this new approach. This poses a reliable route for the scalable growth of monolayer TMDCs, which is essential for their reliable applications in nanoelectronic devices.