We have developed a novel detector concept based on Modified
Internal Gate Field Effect Transistor (MIGFET) wherein a buried
Modified Internal Gate (MIG) is implanted underneath a channel of a
FET. In between the MIG and the channel of the FET there is a
depleted semiconductor material forming a potential barrier between
charges in the channel and similar type signal charges located in
the MIG. The signal charges in the MIG have a measurable effect on
the conductance of the channel. In this paper a double MIGFET pixel
is investigated comprising two MIGFETs. By transferring the signal
charges between the two MIGs Non-Destructive Correlated Double
Sampling Readout (NDCDSR) is enabled.
The proposed MIG radiation detector suits particularly well for
low-light-level imaging, X-ray spectroscopy, as well as synchrotron
and X-ray Free Electron Laser (XFEL) facilities. The reason for the
excellent X-ray detection performance stems from the fact that
interface related issues can be considerably mitigated since
interface generated dark noise can be completely avoided and
interface generated 1/f and Random Telegraph Signal (RTS) noise
can be considerably reduced due to a deep buried channel readout
configuration.
Electrical parameters of the double MIGFET pixel have been evaluated
by 3D TCAD simulation study. Simulation results show the absence of
interface generated dark noise, significantly reduced interface
generated 1/f and RTS noise, well performing NDCDSR operation, and
blooming protection due to an inherent vertical anti-blooming
structure. In addition, the backside illuminated thick fully
depleted pixel design provides a homogeneous radiation entry window,
low crosstalk due to lack of diffusion, and good quantum efficiency
for low energy X-rays and NIR light.
These facts result in excellent Signal-to-Noise Ratio (SNR) and very
low crosstalk enabling thus excellent X-ray energy and spatial
resolution. The simulation demonstrates the charge to current
conversion gain for source current readout to be 1.4 nA/e.