Table of contents

Nanostructured materials have gained importance in recent years due to their significantly enhanced properties. In particular, electrochemistry has a special role in producing a variety of nanostructured materials. In the current review, we discuss the superiority of electrochemical deposition techniques in synthesizing various nanomaterials that exhibit improved characteristics compared with materials produced by conventional techniques, as well as their classification, synthesis routes, properties and applications. The superior properties of a nanostructured nickel coating produced by electrochemical deposition are outlined. The properties of various nanostructured coating materials produced by electrochemical techniques are also described. Finally, the importance of nanostructured coatings in industrial applications as well as their potential in future technologies is emphasized.

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO₂ films implanted by different doses of Si⁺ ions. Room-temperature PL from 400-nm-thick SiO₂ films implanted to a dose of 3×10¹⁶ cm⁻² shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950–1150 °C) and duration (5–20 s). The reported approach of implanting silicon into SiO₂ films followed by RTA may be effective for tuning Si-based photonic devices.

This work deals with atmospheric corrosion to assess the degrading effects of air pollutants on ferrous and non-ferrous metals and alloys, which are mostly used as engineering materials. An exposure study was conducted in the Tuticorin port area located on the east coast of South India, in the Gulf of Mannar with Sri Lanka to the southeast. Common engineering materials, namely mild steel, galvanized iron, Zn, Al, Cu and Cu–Zn alloys (Cu–27Zn, Cu–30Zn and Cu–37Zn), were used in the investigation. The site was chosen where the metals are exposed to marine and industrial atmospheres. Seasonal 1 to 12 month corrosion losses of these metals and alloys were determined by a weight loss method. The weight losses showed strong corrosion of mild steel, galvanized iron, Cu and Zn and minor effect on Al and Cu–Zn alloys. Linear regression analysis was conducted to study the mechanism of corrosion. The composition of corrosion products formed on the metal surfaces was identified by x-ray diffraction and Fourier transform infrared spectroscopy.

We analyze theoretically and experimentally solute redistribution in the dendritic solidification process and positive segregation during solidification of steel ingots. Positive segregation is mainly caused by liquid flow in the mushy zone. Changes in the liquid steel velocity are caused by the temperature gradient and by the increase in the solid fraction during solidification. The effects of buoyancy and of the change in the solid fraction on segregation intensity are analyzed. The relationships between the density change, liquid fraction and the steel composition are considered. Such elements as W, Ni, Mo and Cr decrease the effect of the density variations, i.e. they show smaller tendency to segregate. Based on the modeling and experimental results, coefficients are provided controlling the effects of chemical composition, secondary dendrite arm spacing and the solid fraction.

The plastic deformation of Ti₄₅Zr₁₆Be₂₀Cu₁₀Ni₉ bulk metallic glass has been investigated by nanoindentation performed with loads ranging from 10 to 200 mN in a wide range of loading rates. The plastic flow in the alloy exhibited conspicuous serrations at low loading rates. The serrations, however, became less prominent as the rate of indentation increased. Atomic force microscopy showed a significant pile-up of materials around the indents, indicating that a highly localized plastic deformation occurred under nanoindentation. The possible mechanism governing the plastic deformation in bulk metallic glass specimens is tentatively discussed in terms of strain-induced free volume.

Dynamically vulcanized EPDM/PP (ethylene-propylene-diene/polypropylene) elastomers reinforced with various amounts of organoclay were prepared using octylphenol-formaldehyde resin and stannous chloride dehydrate as vulcanizing agents. The effects of organoclay on vulcanization characteristics, rheological behavior, morphology, thermal stability and thermomechanical properties were studied. Experimental results showed that organoclay affected neither the vulcanization process nor the degree of vulcanization chemically. X-ray analysis revealed that these organoclay-filled thermoplastic vulcanizates (TPVs) were intercalated. With respect to the mechanical properties, organoclay increased both the strength and degree of elongation of TPVs. The morphological observation of fractured surfaces suggested that organoclay acted as a nucleating agent in TPVs, improving their mechanical properties. However, adding organoclay reduced the thermal stability of TPVs by decomposing the swelling agents in the organoclay.

Atomic force microscopy (AFM) is a universal imaging technique, while impedance spectroscopy is a fundamental method of determining the electrical properties of materials. It is useful to combine those techniques to obtain the spatial distribution of an impedance vector. This paper proposes a new combining approach utilizing multifrequency scanning and simultaneous AFM scanning of an investigated surface.

Porous superhydrophobic linear low-density polyethylene (LLDPE) surface was prepared by a simple method. Its water contact angle and sliding angle were 153±2° and 10°, respectively. After contamination, 99% of the contaminant particles were removed from the superhydrophobic LLDPE surface using artificial rain. The superhydrophobic LLDPE surface showed high stability in the pH range from 2 to 13. When LLDPE samples were stored in ambient environment for one month, their water contact angle and sliding angle remained constant. Their superhydrophobic property was also maintained after annealing in the temperature range 10–90 °C.

Tungsten disulfide (WS₂) nanowires have been synthesized through a microwave-assisted chemical route that uses tungstic acid, elemental sulfur and monoethanolamine as starting reagents for obtaining a precursor solution of tetrathiotungstate ions. Acidification of the precursor solution yields amorphous precipitates, which lead to the formation of nanowires of WS₂ with thickness of about 5–10 nm when heated at 750 °C under argon atmosphere for 1.5 h. Phase and the microstructure of the prepared powders have been investigated through x-ray powder diffraction and high-resolution transmission electron microscopy, respectively. Optical absorption of the WS₂ powders reveals a red shift of the exciton bands compared to bulk WS₂.

We outline the ability of zinc phosphate coatings, obtained by chemical conversion, to protect mild steel rebars against localized corrosion, generated by chloride ions in alkaline media. The corrosion resistance of coated steel, in comparison with uncoated rebars and coated and uncoated steel rebars embedded in mortar, were evaluated by open-circuit potential, potentiodynamic polarization, cronoamperometry and electrochemical impedance spectroscopy. The coated surfaces were characterized by x-ray diffraction and scanning electron microscopy. First, coated mild steel rebars were studied in an alkaline solution with and without chloride simulating a concrete pore solution. The results showed that the slow dissolution of the coating generates hydroxyapatite Ca₁₀(PO₄)₆(OH)₂. After a long immersion, the coating became dense and provided an effective corrosion resistance compared with the mild steel rebar. Secondly, the coated and uncoated steel rebars embedded in mortar and immersed in chloride solution showed no corrosion or deterioration of the coated steel. Corrosion rate is considerably lowered by this phosphate coating.

Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×10²⁰ cm⁻³, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.

This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008), which was held at the National Institute for Materials Science (NIMS), Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM) in 2006 (Takano 2006 Sci. Technol. Adv. Mater.7 S1).

The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al) and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al) are discussed, and In₂O₃ (Makise et al) is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high-TC superconductors (Tamegai et al), and the mechanism of superconductivity is discussed. Last but not least, a novel highest-density phase of boron is produced and characterized (Zarechnaya et al).

We hope that this focus issue will help readers to understand the frontiers of superconductivity in semiconductors and assist in the application of new devices using a combination of superconductivity and semiconductivity.

This contribution deals with a few topics closely related to the superconductivity in the heavily boron-doped diamond which are, in our opinion, not properly treated in the current literature. Attention is paid especially to the classification of metallic and insulating state, selection of pairing mechanism, limits of weak coupling approximation and to the influence of granularity on the superconducting transition.

Among the superconducting graphite intercalation compounds, CaC₆ exhibits the highest critical temperature T_c=11.5 K. Bulk samples of CaC₆ are obtained by immersing highly oriented pyrographite pieces in a well-chosen liquid Li–Ca alloy for 10 days at 350 °C. The crystal structure of CaC₆ belongs to the space group. In order to study the superconducting properties of CaC₆, magnetisation was measured as a function of temperature and direction of magnetic field applied parallel or perpendicular to the c-axis. Meissner effect was evidenced, as well as a type II superconducting behaviour and a small anisotropy. In agreement with calculations, experimental results obtained from various techniques suggest that a classical electron-phonon mechanism is responsible for the superconductivity of CaC₆. Application of high pressure increases the T_c up to 15.1 K at 8 GPa.

This review summarizes recent results obtained by ¹¹B solid-state nuclear magnetic resonance (NMR) on boron-doped diamond, grown by the high-pressure high-temperature (HPHT) or chemical vapor deposition techniques. Simple single-pulse experiments as well as advanced two-dimensional NMR experiments were applied to the boron sites in diamond. It is shown that magic-angle spinning at magnetic fields above 10 T is suitable for observation of high-resolution ¹¹B spectra of boron-doped diamond. For boron-doped HPHT diamonds, the existence of the excess boron that does not contribute to electrical conductivity was confirmed and its ¹¹B NMR signal was characterized. The point-defect structures (B+H complexes and -B-B-/-B-C-B- clusters), postulated previously for the excess boron, were discarded and graphite-like structures were assigned instead.

Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped) impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

We investigate the localization and superconductivity in heavily doped semiconductors. The crossover from the superconductivity in the host band to that in the impurity band is described on the basis of the disordered three-dimensional attractive Hubbard model for binary alloys. The microscopic inhomogeneity and the thermal superconducting fluctuation are taken into account using the self-consistent 1-loop order theory. The superconductor-insulator transition accompanies the crossover from the host band to the impurity band. We point out an enhancement of the critical temperature T_c around the crossover. Further localization of electron wave functions leads to the localization of Cooper pairs and induces the pseudogap. We find that both the doping compensation by additional donors and the carrier increase by additional acceptors suppress the superconductivity. A theoretical interpretation is proposed for the superconductivity in the boron-doped diamond, SiC, and Si.

We investigate the possibility of realizing unconventional superconductivity in doped band insulators on the square and honeycomb lattices. The latter lattice is found to be a good candidate due to the disconnectivity of the Fermi surface. We propose applying the theory to the superconductivity in doped layered nitride β-MNCl (M= Hf, Zr). Finally, we compare two groups of superconductors with disconnected Fermi surface, β-MNCl and the iron pnictides, which have high critical temperature T_c, despite some faults against superconductivity are present.

We study boron-doped carbon nanotubes by first-principles methods based on the density functional theory. To discuss the possibility of superconductivity, we calculate the electronic band structure and the density of states (DOS) of boron-doped (10,0) nanotubes by changing the boron density. It is found that the Fermi level density of states D(_F) increases upon lowering the boron density. This can be understood in terms of the rigid band picture where the one-dimensional van Hove singularity lies at the edge of the valence band in the DOS of the pristine nanotube. The effect of three-dimensionality is also considered by performing the calculations for bundled (10,0) nanotubes and boron-doped double-walled carbon nanotubes (10,0)@(19,0). From the calculation of the bundled nanotubes, it is found that interwall dispersion is sufficiently large to broaden the peaks of the van Hove singularity in the DOS. Thus, to achieve the high D(_F) using the bundle of nanotubes with single chirality, we should take into account the distance from each nanotube. In the case of double-walled carbon nanotubes, we find that the holes introduced to the inner tube by boron doping spread also on the outer tube, while the band structure of each tube remains almost unchanged.

We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature T_c=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with T_c=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below T_c with effective hole-carrier concentration n higher than 10²⁰ cm⁻³. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.

The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

R₂Fe₃Si₅ (R= Sc, Y, Lu) contains nonmagnetic iron and has a relatively high superconducting transition temperature T_c among iron-containing superconductors. An anomalous temperature dependence of specific heat C(T) has been reported for polycrystalline samples down to 1 K. We have grown R₂Fe₃Si₅ single crystals, confirmed the anomalous C(T) dependence, and found a second drop in specific heat below 1 K. In Lu₂Fe₃Si₅, we can reproduce C(T) below T_c, assuming two distinct energy gaps 2Δ ₁/k_BT_c = 4.4 and 2Δ ₂/k_BT_c = 1.1, with nearly equal weights, indicating that Lu₂Fe₃Si₅ is a two-gap superconductor similar to MgB₂. Hall coefficient measurements and band structure calculation also support the multiband contributions to the normal-state properties. The specific heat in the Sc₂Fe₃Si₅ single crystals also shows the two-gap feature. R₅Ir₄Si₁₀ (R = Sc, rare earth) is also a superconductor where competition between superconductivity and the charge-density wave is known for rare earths but not for Sc. We have performed detailed specific heat measurements on Sc₅Ir₄Si₁₀ single crystals and found that C(T) deviates slightly from the behavior expected for weak-coupling superconductors. C(T) for these superconductors can also be reproduced well by assuming two superconducting gaps.

Extensive soft x-ray photoelectron spectroscopy studies are performed on Ba₈ Ga₁₆ Ge₃₀ (BGG) and Sr₈Ga₁₆Ge₃₀ (SGG) single crystals ranging from Fermi to core levels, at a high-energy facility. Valence band x-ray photoelectron spectroscopy (XPS) experiments with theoretical calculations revealed that the valence band is mainly constructed by the Ge/Ga 4s and 4p wave functions with little contribution of the Ba/Sr atomic orbitals. Surprisingly, unexpected features evidencing the different shift for the 2a- and 6d- sites between Ba 4d and Sr 3d are observed. The detailed analyses including theoretical support by first-principles band-structure calculations lead to the conclusion that the component distributions of the larger tetrakaidecahedral cage are different depending on the endohedral atoms, which contrasts with the past consensus that BGG and SGG have the same framework structure. This may give thorough reconsiderations on earlier interpretations of experimental data.

Thin polycrystalline zinc-doped indium oxide (In₂O₃–ZnO) films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0⩽x ⩽0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5⩽T ⩽300 K, H⩽6 Tfor 350 nm films annealed in air. Films with 0⩽x⩽0.03 show the superconducting resistive transition. The transition temperature T_c is below 3.3 K and the carrier density n is about 10²⁵–10²⁶ m⁻³. The annealed In₂O₃–ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field H_c2 (T) for the film with x = 0.01. From the slope of dH_c2 /dT, we obtain the coherence length ξ (0) ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

The densest boron phase (2.52 g cm^-3) was produced as a result of the synthesis under pressures above 9 GPa and temperatures up to ∼1800 °C. The x-ray powder diffraction pattern and the Raman spectra of the new material do not correspond to those of any known boron phases. A new high-pressure high-temperature boron phase was defined to have an orthorhombic symmetry (Pnnm (No. 58)) and 28 atoms per unit cell.

Superconducting boron-doped diamond samples were synthesized with isotopes of ¹⁰B, ¹¹B, ¹³C and ¹²C. We claim the presence of a carbon isotope effect on the superconducting transition temperature, which supports the 'diamond-carbon'-related nature of superconductivity and the importance of the electron–phonon interaction as the mechanism of superconductivity in diamond. Isotope substitution permits us to relate almost all bands in the Raman spectra of heavily boron-doped diamond to the vibrations of carbon atoms. The 500 cm⁻¹ Raman band shifts with either carbon or boron isotope substitution and may be associated with vibrations of paired or clustered boron. The absence of a superconducting transition (down to 1.6 K) in diamonds synthesized in the Co–C–B system at 1900 K correlates with the small boron concentration deduced from lattice parameters.

The electronic structure of boron–hydrogen complex and boron pair in diamond are studied by first-principles density-functional calculations with supercell models. The electronic structure calculated for the B–H complexes with C_2v or C_3v symmetry and the nearest-neighbor B pair is used to interpret recent experimental results such as B 1s x-ray photoemission spectroscopy, ¹¹B nuclear quadruple resonance and B K-edge x-ray absorption spectroscopy, which cannot be explained solely by the isolated substitutional boron.