We present a study of the spin disorder resistivity () and the electronic specific heat coefficient (γ) in
Gd4(Co1−xCux)3 compounds,
with x = 0.00, 0.05, 0.10, 0.20 and 0.30. The experimental results show a strongly nonlinear dependence
of on the average de Gennes factor (Gav) which, in similar intermetallic compounds, is usually attributed
to the existence of spin fluctuations on the Co 3d bands. Values of
γ were found
around 110 mJ mol−1 K−2 for the
Gd4(Co1−xCux)3 compounds, much larger
than 38.4 mJ mol−1 K−2 found for the
isostructural nonmagnetic Y4Co3
compound. Using a novel type of analysis we show that the ratio follows a well-defined linear dependence on
Gav, which is expected when appropriate dependencies with the effective electron mass
are taken into account. This indicates that band structure effects, rather than
spin fluctuations, could be the main cause for the strong electron scattering and
γ enhancement
observed in the Gd4(Co1−xCux)3
compounds. A discussion on relevant features of magnetization and electrical resistivity
data, for the same series of compounds, is also presented.