The in situ, at-temperature, real-time monitoring of
open-volume defect formation, migration, coalescence and
annealing has long been possible in bulk solids by measuring
the Doppler broadening of annihilation radiation arising from
the implantation of energetic positrons from a radioactive
source. However, equivalent measurements on vacancy-type
defects in thin films or within ~102 nm of a solid
surface have not been made, principally because of the
distorting influence on the data of surface annihilations. This
paper describes the first measurements known to the authors of
in situ, at-temperature annealing studies of
near-surface open-volume defects, using as an example a silicon
sample implanted with 50 keV Si+ ions. The technique
involves the measurement of the fraction of controllable-energy
positrons which diffuse back to the surface and there form
positronium. The applicability and limitations of this method
are discussed.