CoSi2/Si(111) interfaces have been prepared by annealing of a UHV-evaporated, Co layer at 500, 600, and 900 degrees C. Using electron microscopy at atomic-scale resolution, the authors have compared experimental pictures with an extensive set of calculated images. Their observations support Si-Si interfacial bonds consistent with a seven-fold coordination of the first Co layer. This is the first evidence of this interface geometry for CoSi2, other reports being in favour of Co-Si bonds and a five-fold or eight-fold Co coordination.