We investigate the oxidation behaviour of Si1-xGex alloys
(x = 0.05, 0.15, and 0.25). The oxidation of SiGe films with
different compositions was carried out in O2 (dry) atmosphere at
800, 900 and 1000°C, respectively, for various
lengths of time. The thickness and property of the nanoparticle and
nanolayer in oxide films and germanium segregation in oxidation of SiGe
alloys are measured by using a high precision ellipsometer. The
results are in good agreement with the Rutherford backscattering
spectrometry, profile dektak instrument and
high-resolution scanning transmission electron microscopy. We
found that the Ge content in the oxide layer increases with the Ge
content in SiGe alloys, and that the Ge content in the oxide film decreases with
the increasing oxidation temperature and time. Rejection of Ge results
in piling up of Ge at the interface between the growing SiO2 and
the remaining SiGe, which forms a nanometre Ge-rich layer. Substantial
interdiffusion of Si and Ge takes place in the remaining SiGe, which
leads to the complicated distribution of Ge segregation. We find a
nanometre cap layer over the oxide film after fast oxidation, in which
there are many Ge nanoparticles. We analyse the kinetics and mechanism
of the nanostructure of the oxide and Ge segregation in oxidation of
Si1-xGex alloys.