Radiative Properties of Semiconductors

Affiliations

New Jersey Institute of Technology Newark, New Jersey USA

About the authors

N M Ravindra (Ravi) is Professor of Physics at the New Jersey Institute of Technology (NJIT). He was the Chair of the Physics Department (2009–13) and Director, Interdisciplinary Program in Materials Science and Engineering at NJIT (2009 – 2016).

Ravi is the Editor-in-Chief of Emerging Materials Research [http://www.icevirtuallibrary.com/content/serial/emr]. He is Series Editor of Emerging Materials: Processing, Performance and Applications, Momentum Press [http://www.momentumpress.net/]. He has been a frequent Guest Editor of JEM, the Journal of Electronic Materials [http://www.tms.org/pubs/journals/JEM/jem.aspx]; JOM [http://www.tms.org/pubs/journals/JOM/JOMhome.aspx]. He serves on the editorial board of several international journals and book series that are dedicated to materials science and engineering.

Before joining NJIT in 1987, Ravi had been associated with Vanderbilt University, the Microelectronics Center of North Carolina (MCNC), North Carolina State University, International Center for Theoretical Physics (ICTP- Trieste), Politecnico di Torino, CNRS associated labs in Paris and Montpellier.

Ravi holds a PhD in Physics from Indian Institute of Technology (Roorkee, India), MS and BS in Physics from Bangalore University, India. Ravi and his research team have published over 300 papers in international journals, books and conference proceedings; his team has several pending and two issued patents; he has organized over 30 international conferences; and he has given over 75 talks in international meetings.

His research activities have been sponsored by agencies including the US Department of Defense (DOD), Defense Advanced Research Projects Agency (DARPA), SEMATECH, Semiconductor Research Corporation, US Department of Energy/National Renewable Energy Laboratory (DOE/NREL), US Department of Education, National Aeronautics & Space Administration (NASA), US Army Research Office, US Air Force of Scientific Research, New Jersey Commission on Science and Technology and the National Science Foundation.

Ravi's research interests include education, energy, health, materials, manufacturing and the physics of sports. He has been a frequent keynote speaker in several international conferences and has won several awards in the US and abroad.

Ravi is the co-editor of Transient Thermal Processing Techniques in Electronic Materials (TMS – The Minerals, Metals, Materials Society, 1999); he is the co-author of Black Silicon – Processing, Properties & Applications (Momentum Press, 2016).

Sita Rajyalaxmi Marthi (Laxmi) received a BSc in Physics and MSc in Applied Physics from Osmania University, Hyderabad, India, in 2006 and 2009 respectively. Laxmi is currently pursuing a PhD in Materials Science & Engineering at the New Jersey Institute of Technology. Her research interests are related to the optical properties of black silicon, related materials and device structures. Laxmi is a co-author of Black Silicon – Processing, Properties & Applications (Momentum Press, 2016).

Asahel Bañobre received his BS and MS in Applied Physics with Honors from the New Jersey Institute of Technology (NJIT) in 2003 and 2006, respectively. From 2005 to 2015, Asahel worked as a Test Engineer at Kulite Semiconductor Inc., where he contributed to the optimization and automation of device test procedures and the development of custom product prototypes. Currently, he is pursuing his PhD in Materials Science and Engineering at NJIT. His doctoral study focuses on the design, modeling, fabrication and characterization of uncooled infrared microbolometers. His research interests include semiconductors, MEMS integrated sensors and transducers such as pressure and temperature sensors, and infrared detectors.