Single-Atomic-Level Probe of Transient Carrier Dynamics by Laser-Combined Scanning Tunneling Microscopy

Shoji Yoshida; Munenori Yokota; Osamu Takeuchi; Haruhiro Oigawa; Yutaka Mera; Hidemi Shigekawa

doi:10.7567/APEX.6.032401

Applied Physics Express

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Single-Atomic-Level Probe of Transient Carrier Dynamics by Laser-Combined Scanning Tunneling Microscopy

Shoji Yoshida¹, Munenori Yokota¹, Osamu Takeuchi¹, Haruhiro Oigawa¹, Yutaka Mera¹ and Hidemi Shigekawa¹

Published 5 March 2013 • ©2013 The Japan Society of Applied Physics
Applied Physics Express, Volume 6, Number 3 Citation Shoji Yoshida et al 2013 Appl. Phys. Express 6 032401

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¹ Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

Dates

Received 5 February 2013
Accepted 21 February 2013
Published 5 March 2013

DOI

https://doi.org/10.7567/APEX.6.032401

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Abstract

The first application of laser-combined time-resolved scanning tunneling microscopy (STM) to single-atomic-level analysis was demonstrated. The dynamics of photoinduced holes, transiently trapped at the surface and recombined with the electrons tunneling from the STM tip to the in-gap states associated with single-(Mn,Fe)/GaAs(110) structures, was successfully probed on the atomic level for the first time. In addition, light-modulated scanning tunneling spectroscopy (LT-STS) was performed for energy–space analysis in conjunction with time-resolved measurement and shown useful for developing the laser-combined STM techniques for further advances.

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