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(Invited) Chemical and Electronic Surface Structure of Compound Semiconductors for Solar Water Splitting

© 2017 ECS - The Electrochemical Society
, , Citation Clemens Heske 2017 Meet. Abstr. MA2017-02 1866 DOI 10.1149/MA2017-02/42/1866

2151-2043/MA2017-02/42/1866

Abstract

The purpose of this talk is to utilize a tool chest of soft x-ray and electron spectroscopies (in particular using high-brilliance synchrotron radiation) to gain insights into the electronic and chemical surface properties of candidate materials for solar water splitting. Focus will be placed on GaInP2- and Cu(In,Ga)(S,Se)2-based material systems, and how ambient conditions and deliberate tailoring can modify and impact the surface of such materials. It will be shown that photoelectron spectroscopy (PES), x-ray-excited Auger electron spectroscopy (XAES), inverse photoemission (IPES), x-ray emission spectroscopy (XES), and x-ray absorption spectroscopy (XAS) can be suitably combined to derive band edge positions, band gaps, electronic level alignment, and insights into chemical stability, both with experiments in ultra-high vacuum, as well as under in situ and operando conditions.

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10.1149/MA2017-02/42/1866