Abstract
GeSn/SiGeSn techniques are of great interest in the area of Si photonics due to: 1) the industry scalable growth; 2) compatible with current Si complementary metal-oxide semiconductor (CMOS) process; 3) capability of monolithic integration on Si; 4) the identified group-IV based direct bandgap materials; and 5) the tunable bandgap allowing the optoelectronic devices operation features broad wavelength coverage in near- and mid-infrared ranges. In the past a few years, the GeSn/SiGeSn material growth, the materials and devices characteristics have been comprehensively studied. Plenty of promising results are reported.
In this work, the following aspects regarding GeSn/SiGeSn techniques are investigated: 1) low-defect material growth technique via Ultra High Vacuum Chemical Vapor Deposition (UHVCVD) system; 2) advanced material and optical characterizations of GeSn/SiGeSn thin films, Ge/GeSn/Ge double heterostructure (DHS), and GeSn/SiGeSn quantum well samples; 3) demonstration of GeSn-based optoelectronic devices including photodetectors and emitters.