Abstract
We have investigated characteristics of in situ B-doped and selective Si epitaxial growth by atmospheric-pressure plasma chemical vapor deposition (AP-PCVD) at VHF frequency. Using B2H6 as a doping gas, defect-free in situ B-doped epitaxial Si films were grown by AP-PCVD at 570ºC. A high carrier concentration up to 1020 cm-3 was achieved at a high growth rate of 0.20 μm/min. The hole mobility of highly B doped Si films is the same as that of bulk Si single crystals, demonstrating that the electrical quality of AP-PCVD Si film is high enough for semiconductor device applications. Si selective epitaxial growth by AP-PCVD has also been studied using atomic hydrogen as etchant species. Highly selective epitaxial growth of Si with good film quality has been observed at 470ºC by increasing H2 gas concentration in the plasma.