Distribution Coefficient of Antimony in Silicon from Solvent Evaporation Experiments

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© 1961 ECS - The Electrochemical Society
, , Citation F. A. Trumbore et al 1961 J. Electrochem. Soc. 108 458 DOI 10.1149/1.2428111

1945-7111/108/5/458

Abstract

Distribution coefficients have been calculated from Hall effect measurements on heavily doped silicon crystals grown by a solvent evaporation technique from melts containing between 2 and 8 atom per cent antimony. Nearly a twofold decrease in the distribution coefficient (from 0.02 to 0.01) was observed in this concentration range. It appears that any "facet effect," if present, was small and that near‐equilibrium solid solubilities were obtained.

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10.1149/1.2428111