Electrical Characteristics of the Silicon Nitride‐Gallium Arsenide Interface

The results of an investigation of the electrical characteristics of the silicon nitride‐gallium arsenide interface as determined by capacitance‐voltage (C‐V) curves is presented and discussed. The was pyrolytically deposited from and in the range 650°–750°C on n‐ and p‐type, , . A hysteresis of the C‐V curve is noted; the amount of curve shift is shown to be heavily process dependent. Times involved in curve shift both with and without applied bias are given. Surface state density for the best p sample is in the 10¹² range.