Abstract
Since the middle of the 90's, many techniques of growing GaN epitaxy have been developed, using either MOCVD or MBE growth methods. Historically, Sapphire and Silicon Carbide have been primarily the substrates used to gorw the GaN Epilayers. The reason was the low mismatch between GaN and these Compounds semiconductors. However each of them has its drawbacks. Poor thermal conductivity for the Sapphire matters as far as the power density going through the device increases. About the SiC, the perfect material after Diamond to dissipate the heat, face significant challenges to increase substrates diameter greater than 3 inches. By going in these directions, the industrialization of the GaN Epitaxy won't be able to increase its capacity to large volume and large diameter and will remain as a technology for a niche market. Picogiga has worked on the development of alternative approach which assures the capability to increase production easily. Obviously because its maturity, its availability, Silicon substrates must be our best choice material. Secondly thank to the Smart-CutTM process developed by Soitec, Picogiga has transferred this new technique to the Compound Semiconductor. This technique has opened new ways to optimize the GaN technology, to improve performances, to remain cost competitive.