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Growth and Properties of Heteroepitaxial GaInAs Alloys on GaAs Substrates Using Trimethylgallium, Triethylindium, and Arsine

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© 1975 ECS - The Electrochemical Society
, , Citation B. Jayant Baliga and Sorab K. Ghandhi 1975 J. Electrochem. Soc. 122 683 DOI 10.1149/1.2134292

1945-7111/122/5/683

Abstract

Heteroepitaxial films of have been grown on substrates by the reaction of triethylindium and trimethylgallium with arsine gas. Specular films have been obtained over the entire composition range at a substrate temperature of 600°C. The observed mobilities of 1–2 μm thick films are about one‐third of the reported bulk values in literature and show a minimum at a composition of approximately . The mobility of such films decreases sharply with decreasing temperature.

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