Abstract
Vapor‐phase epitaxial growth of 
was carried out in a new system using a mixture of 
and 
as source materials. Over a temperature range of about 
, the epitaxial layers were prepared isothermally using
and 
sources. Their growth rates were increased by 249 nm laser irradiation at temperatures from 480° to 570°C. In situ analyses by infrared spectroscopy indicated that the deposition of 
is due to a direct reaction of undecomposed 
with 
and that the growth enhancement is caused by a photoexcitation of
.