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J. L. Davidson1, J. S. Shor2, D. Wur1 and A. D. Kurtz2
© 1994 ECS - The Electrochemical Society
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Citation J. L. Davidson et al 1994 J. Electrochem. Soc. 141 3522
DOI 10.1149/1.2059364
11 Total downloads
A novel fabrication process for monolithic, electrically isolated diamond resistors is discussed. Selective growth of p‐type diamond resistors on undoped diamond has been accomplished by using 
as a sacrificial, "lift‐off" layer. Diamond resistors with linewidths less than 10 μm exhibited resistivities of 10 to 20 Ω‐cm. No measurable leakage between the resistors or to the substrate was observed.
