Abstract
and 
thin films were fabricated on Si and 
substrates by chemical vapor deposition (CVD) using 
, 
, 
, and 
where DPM is dipivaloylmethanate or formally 2,2,6,6‐tetramethyl‐3,5‐heptanedionate. The deposition system was operated in both thermal CVD mode and electron cyclotron resonance (ECR) plasma CVD Mode. Variations in individual Sr and Ti deposition rates with differing deposition conditions were investigated. The 
and 
films were characterized with a view to discussing the step‐coverage, crystal structure, and electrical properties. The step‐coverage over the 300 nm wide 
lines, with 500 nm height and 500 nm spacing, was 30 to 40%. The 40 to 100 nm 
films, through the postdeposition annealing process, showed dielectric constants >140 with a leakage current density level 
at 1 V. The prospects for applying the CVD 
films to giga‐bit dynamic random access memory storage capacitors are discussed.