Electrical Properties of Bulk Silicon Dioxide and SiO₂ / Si Interface Formed by Tetraethylorthosilicate‐Ozone Chemical Vapor Deposition

Silicon oxide films have been deposited with chemical vapor deposition from at low temperature below 400°C for the gate insulator of thin‐film transistors. The electrical properties of the bulk silicon oxide film and the interface were investigated as a function of process parameters such as deposition temperature and ratio using capacitance‐voltage and current‐voltage measurements. The breakdown strength increased and the leakage current decreased as the deposition temperature increased, but both were not significantly dependent on the ratio. The breakdown strength of the film deposited at 380°C was about 5 MV/cm. As the deposition temperature increased, the interface trap density at Si midgap was almost constant, but near and , which is the center, decreased. The interface trap density was lowest when the ratio was 0.35. It was confirmed that the deposition temperature influenced the electrical properties of the bulk oxide and the interface, but the ratio affected only the interface properties. © 2000 The Electrochemical Society. All rights reserved.