Novel Application of Crystalline Indium-Gallium-Zinc-Oxide Technology to LSI: Dynamically Reconfigurable Programmable Logic Device Based on Multi-Context Architecture

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© 2013 ECS - The Electrochemical Society
, , Citation Yuki Okamoto et al 2013 ECS Trans. 54 141 DOI 10.1149/05401.0141ecst

1938-5862/54/1/141

Abstract

A pass gate (PG) configured with a configuration memory (CM) composed of a c-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO) FET and a pass transistor composed of an NMOS FET is applied to a multi-context routing switch (MC-RS) of a dynamically reconfigurable programmable logic device (DRPLD) based on multi-context architecture (MC-DRPLD). The proposed PG (OS PG) requires fewer transistors than a conventional PG configured with an SRAM cell served as a CM (SRAM PG). A MC-RS configured with the OS PG (OS MC-RS) has enabled its layout area to be 40% less than that of a MC-RS configured with the SRAM PG (SRAM MC-RS). Further, the delays of the MC-RSs with 2 to 16 contexts have been reduced by 24% to 37%. The MC-DRPLD including the OS MC-RS can switch contexts in one clock (50 nsec) at a clock frequency of 20 MHz, which enables dynamic reconfiguration at high speed.

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10.1149/05401.0141ecst