Multilayered Thin Metal Film Deposition by Sequential Operation of Nanosilicon Electron Emitter in Metal–Salt Solutions

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Published 20 June 2011 Copyright (c) 2011 The Japan Society of Applied Physics
, , Citation Toshiyuki Ohta et al 2011 Jpn. J. Appl. Phys. 50 06GG03 DOI 10.1143/JJAP.50.06GG03

1347-4065/50/6S/06GG03

Abstract

The use of a nanocrystalline silicon (nc-Si) ballistic electron emitter in metal–salt solutions induces the deposition of thin metal films. The nc-Si emitter is composed of a thin Au/Ti film, an anodized polycrystalline Si layer, and an n+-Si substrate. When the emitter is driven in NiCl2, CoSO4, and ZnSO4 solutions without using any counter electrodes, thin Ni, Co, and Zn films are deposited on the emission area, respectively, as well as a thin Cu film in CuSO4 solution. According to cyclic voltammogram measurements under a standard three-electrode configuration, the hot electron injection effect into the solution is clearly observed in all cases at potentials within the electrochemical window, in which no electrolytic reactions occur. Energetic electrons injected into the solutions cause the direct reduction of metal ions. As a possible application, the multilayered deposition of different metals is demonstrated by sequential operation in NiCl2 and CuSO4 solutions.

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10.1143/JJAP.50.06GG03