Energy Transfer in Multi-Stacked InAs Quantum Dots

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Published 20 April 2011 Copyright (c) 2011 The Japan Society of Applied Physics
, , Citation Kouichi Akahane et al 2011 Jpn. J. Appl. Phys. 50 04DH05 DOI 10.1143/JJAP.50.04DH05

1347-4065/50/4S/04DH05

Abstract

We fabricated a modulated stacked quantum dot (QD) structure to investigate energy transfer among QDs using a strain compensation technique that allowed us to fabricate a vertically aligned, highly stacked structure without any degradation in crystal quality. Enhanced photoluminescence (PL) intensity for the ground state of large QDs was clearly observed in a sample where the ground state of small QDs was resonant to the first excited state of large QDs, indicating energy transfer from small QDs to large QDs. Long-range energy transfer reached approximately 200 nm and can be considered from the measurement of N dependence of PL intensity.

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10.1143/JJAP.50.04DH05