Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate

, , , , , and

Published 7 February 2011 Copyright (c) 2011 The Japan Society of Applied Physics
, , Citation Tadashi Okumura et al 2011 Jpn. J. Appl. Phys. 50 020206 DOI 10.1143/JJAP.50.020206

1347-4065/50/2R/020206

Abstract

A lateral junction waveguide-type GaInAsP/InP photodetector was fabricated on a semi-insulating InP substrate by two-step organometallic vapor-phase epitaxy (OMVPE) regrowth. Responsivities of 0.9 A/W at 1500 nm and 0.27 A/W at 1550 nm were obtained. A 3-dB bandwidth of 6 GHz and 6-Gbps error-free operation under non-bias conditions were achieved with a stripe width of 1.4 µm and a device length of 220 µm.

Export citation and abstract BibTeX RIS

10.1143/JJAP.50.020206