Improvement of Metal–Insulator–Semiconductor-Type Organic Light-Emitting Transistors

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Published 21 March 2008 • Copyright (c) 2008 The Japan Society of Applied Physics
, , Citation Kenji Nakamura et al 2008 Jpn. J. Appl. Phys. 47 1889 DOI 10.1143/JJAP.47.1889

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Author affiliations

1 Corporate Research and Development Laboratories, Pioneer Corporation, Fujimi, Tsurugashima, Saitama 350-2288, Japan

2 Research and Development Center, Dai Nippon Printing, Wakashiba, Kashiwa, Chiba 277-0871, Japan

3 Fundamental and Environmental Research Laboratories, NEC Corporation, Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

4 Faculty of Engineering, Chiba University, Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

Dates

  1. Received 11 July 2007
  2. Accepted 22 September 2007
  3. Published

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1347-4065/47/3S/1889

Abstract

We developed metal–insulator–semiconductor-type organic light-emitting transistors (MIS-OLETs), and improved their properties by optimizing the device structure. MIS-OLETs showed a maximum drain current of ID = -149 µA, maximum luminance of 1034 cd/m2 (VD = -20 V, VG = -50 V) and on/off ratio of over 104. Moreover an active-matrix display using MIS-OLETs on a plastic substrate was fabricated. The developed 16×16 active-matrix-drive organic light-emitting transistors (AMOLET) showed excellent properties by optimizing device structure.

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10.1143/JJAP.47.1889