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Effects of Ion Energy Control on Production of Nitrogen–C60 Compounds by Ion Implantation

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Published 24 October 2006 Copyright (c) 2006 The Japan Society of Applied Physics
, , Citation Shigeyuki Abe et al 2006 Jpn. J. Appl. Phys. 45 8340 DOI 10.1143/JJAP.45.8340

1347-4065/45/10S/8340

Abstract

Nitrogen–C60 compounds such as azafullerene (C59N) and nitrogen-atom-encapsulated fullerene (N@C60) are produced by implanting nitrogen ions into C60 thin films on a substrate immersed in an electron cyclotron resonance plasma under a mirror magnetic field. Each compound is found to be synthesized, depending on the ion energy provided by the potential difference between the substrate and the plasma. The optimum energy for C59N synthesis is approximately 40–50 eV, and the amount of C59N decreases in an ion energy range larger than 50 eV. In contrast, an ion energy larger than 20 eV is required for N@C60 synthesis.

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10.1143/JJAP.45.8340