Abstract
Silicon carbide (SiC) is expected to be a promising semiconductor material for high-temperature, high-frequency, high-power and energy-saving applications. However, it is so hard and so chemically stable that there is no efficient method of machining it without causing damage to the machined surface. Plasma chemical vaporization machining (PCVM) is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. PCVM has a high removal rate equivalent to those of conventional machining methods such as grinding and lapping, because the radical density in atmospheric-pressure plasma is much higher than that in normal low-pressure plasma. In this paper, the polishing characteristics of silicon carbide by PCVM are described. As a result, a high machining rate (approximately 0.18 mm/min) and a very smooth surface (below 2 nm peak-to-valley in a 500 nm square area) are achieved.