High Sensitivity InSb Ultra-Thin Film Micro-Hall Sensors for Bioscreening Applications

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Published 11 June 2004 • Copyright (c) 2004 The Japan Society of Applied Physics
, , Citation Adarsh Sandhu et al 2004 Jpn. J. Appl. Phys. 43 L868 DOI 10.1143/JJAP.43.L868

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Author affiliations

1 Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

2 Department of Electrical Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

3 Asahikasei Corporation, 2-1 Samejima, Fuji City 416-8501, Japan

4 Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

5 Graduate School of Bioscience and Biotechnology, Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

Dates

  1. Received 15 April 2004
  2. Accepted 1 May 2004
  3. Published

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Abstract

A high sensitivity, 4.5 µm×4.5 µm InSb thin film micro-Hall sensor (micro-HS) with a minimum field detection (Bmin) of 77 nT/(Hz)1/2 was developed for bioscreening applications and used for the detection of a single 2.8 µm diameter superparamagnetic microbead by monitoring its ac magnetic susceptibility. The scalability of the InSb micro-HS was demonstrated by fabricating 500 nm×500 nm InSb nano-Hall sensors with Bmin of 0.72 µT/(Hz)1/2 that could potentially be used to detect 100 nm sized superparamagnetic particles.

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10.1143/JJAP.43.L868