Abstract
Single-side-polished (SSP) wafers prepared using six different methods were examined following unpatterned oxide chemical mechanical polishing (CMP). We found a clear and positive correlation between the standard deviation of the nanotopography profile and that of the film thickness variation after unpatterned oxide CMP. Our power spectral density (PSD) analysis of the profiles quantitatively demonstrated how the nanotopography of the different wafers affected the film thickness variation. We also confirmed that the wafers prepared with an improved SSP technique showed small film thickness variation after unpatterned oxide CMP, indicating that the nanotopography had less impact on the film thickness.