Abstract
Various ways of the post metal etch treatment to prevent the possible secondary corrosion was investigated. It is found that the one of the reasons of the degradation in device wafer which processed by the post treatment after Al alloy(TiN/Al–Si–Cu/TiN/Ti) plasma etch should be the potent corrosion occurred at the next device manufacturing sequences. Usually it is hardly detected during normal inspections in dry process step. BCl3 plasma treatment right after plasma etching could remove the precursor of the potent corrosion by reducing Ti on the etched Al sidewall.